901 704 16 08 55 Search Results
901 704 16 08 55 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Radiall R125 054
Abstract: Radiall 610 108 001 Radiall R125-256 R125.403.000 1/4-36 UNS-2B R125.680.000 Radiall sma Radiall R125.176 coaxial cable TZC 500 Radiall R125.153
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mn 9105
Abstract: 04401A
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DEP90 022DIA 5/8-24UNEF-2A 8801A C39012 mn 9105 04401A | |
TPM1919-40Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point |
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TPM1919-40 170mA TPM1919-40 | |
ic 7442 details
Abstract: 8084 microcontroller Ic 7442 meo 412 ic 7442 encoder rll encoder 8084 microcontroller block diagram description EM 516 741 ic 4558 pin diagram RS 4558
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Am95C98 X3B11 NSP-4500-5/92-0 ic 7442 details 8084 microcontroller Ic 7442 meo 412 ic 7442 encoder rll encoder 8084 microcontroller block diagram description EM 516 741 ic 4558 pin diagram RS 4558 | |
1NTC
Abstract: Am80286 AM95C94 ABEP
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Am95C98 X3B11 NSP-4500-5/92-0 1NTC Am80286 AM95C94 ABEP | |
str 8045Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795 |
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124th 233-4121x207 275-6391X225 str 8045 | |
PAL 007B
Abstract: TEA 1091 str 5717 PAL 0078 PAL 010a PAL 002a inverter circuit diagram electra A10H-15 4155 cmos 4558 pin configuration
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PALCE20RA1OH-15 24-pin 28-pin PALCE20RA10 WCP-14M-5/91-0 PAL 007B TEA 1091 str 5717 PAL 0078 PAL 010a PAL 002a inverter circuit diagram electra A10H-15 4155 cmos 4558 pin configuration | |
bticino
Abstract: bTicino Magic 1SL9891A00 1SL9143A00 1SLC800001D0201 6 canali 393 EZ 639 393 EZ 952 galvanised steel conduit 1SL9033A00
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1SLC800001D0201 1SLC800001D0201 bticino bTicino Magic 1SL9891A00 1SL9143A00 6 canali 393 EZ 639 393 EZ 952 galvanised steel conduit 1SL9033A00 | |
Contextual Info: COM’L: H-15 ZI Advanced Micro Devices PALCE20RA1 OH-15 24-pin Asynchronous EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • ■ Programmable replacement for high-speed CMOS orTTL logic TTL-level register preload for testability Easy design with PALASM software |
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PALCE20RA1 OH-15 24-pin 28-pin WCP-14M-5/91-0 | |
Contextual Info: o *? * Am2976 Eleven-Bit Dynamic Memory Driver PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Large capacitive drive capability up to 88 DRAMs designed to drive 16K, 64K. and 2 56K dynam ic-m em ory arrays. 24-pin. 0 3-mch space-saving ceram ic dbd plastic dual |
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Am2976 24-pin. 28-pin 11-bit t221-4420 AIS-WCP-15M-01/86-0 | |
str 5717
Abstract: pal 007a 617-2240 4558 pin configuration PAL 002a 13003 TO 92 PACKAGE 4155 cmos cd 13003 pal 003A pal 005a
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PALCE61 24-pin WCP-17M-7/91 str 5717 pal 007a 617-2240 4558 pin configuration PAL 002a 13003 TO 92 PACKAGE 4155 cmos cd 13003 pal 003A pal 005a | |
Contextual Info: MRV 10 1393 COM’L: -7 a Advanced Micro Devices PALCE22V10H-7 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 7.5 ns propagation delay ■ 100 MHz fm a x external ■ Low-power EE CMOS ■ 10 macrocells programmable as registered or |
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PALCE22V10H-7 24-Pin 28-pin 7660A | |
Contextual Info: JUL 2 9 199 COM’L PALCE29MA16H-25 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High-performance sem icustom logic replacement; Electrically Erasable EE) technology allows reprogrammability |
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PALCE29MA16H-25 24-Pin ICP-13M-6/9H) | |
Contextual Info: MAY 2 ,6 1993 FINAL COM’L: H-5 a PALCE16V8H-5 Advanced Micro Devices EECMOS 20-Pin High-Speed Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS Programmable output polarity • Pin, function and fuse-map compatible with ail 20-pin GAL devices |
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PALCE16V8H-5 20-Pin PAL16R8 PAL10H8 7701A | |
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l0925
Abstract: AM26LS33PC
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Am26LS32/Am26LS33 Am26LS33 Am26LS32 RS-422 RS-423 0S399C CP-17M-9/93-0 l0925 AM26LS33PC | |
Contextual Info: F IN A L a Advanced Micro Devices Am26LS38 Quad Differential Backplane Transceiver DISTINCTIVE CHARACTERISTICS • 10 Mb data rate ■ 0.45 V DC noise margin ■ Driver register and receiver latch with register bypass mode ■ Biasing line terminations allow low voltage |
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Am26LS38 B/12//93 CP-17M-ar93-0 | |
Contextual Info: FINAL COM’L: Q-10 c\ Advanced Micro Devices PALCE22V10Q-10 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 10 ns propagation delay ■ 83 MHz fMAX external ■ Low-power EE CMOS ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to |
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PALCE22V10Q-10 24-Pin 28-pin CP-14M-12/93-0 1S228A | |
labpro
Abstract: str 5717 pal 007a 617-2240 lm 4558 PAL 002a pal 010a PALCE29M16 PALCE29M16H PALCE29M16H-25
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PALCE29M16H-25 24-Pin 02S73Ã WCP-13M-6/91- labpro str 5717 pal 007a 617-2240 lm 4558 PAL 002a pal 010a PALCE29M16 PALCE29M16H PALCE29M16H-25 | |
Contextual Info: NOV 2 1 199t Advance Inform ation AMD 80EC287 Processor Advanced Micro Devices Enhanced 80-Bit CMOS Numeric Processor DISTINCTIVE CHARACTERISTICS • Pin compatible and functionally equivalent to the Intel 80287 Compatible with IEEE floating point Standard 754 |
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80EC287â 80-Bit 16-MHz 44-pin 40-pin WCP-16 5M-2/91 -11959C-0 y22/g0 | |
PAL22V10Contextual Info: COM’L PAL22V10-7 7.5 ns 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ 7.5 ns propagation delay and 91 MHz fMAx 10 macrocells programmable as registered or combinatorial, and active high or active low to |
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PAL22V10-7 24-Pin 28-pin PAL22V10-7 high-sp2400 CP-13M-3/92-0 PAL22V10 | |
Contextual Info: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic |
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PALCE29M16H-25 24-Pin | |
Contextual Info: MÄV i o 1993 IND: -30 Advanced Micro Devices PALLV16V8Z-30 Low-Voltage, Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = +3.0 V to +3.6 V ■ Zero-power CMOS technology |
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PALLV16V8Z-30 20-Pin PAL16R8 PAL10H8 | |
Contextual Info: JU N 6 1991 COM’L: H-10 MIL: H-15 PALCE20V8H-10 EE CMOS 24-Pin Universal Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Pin, function and fuse-map compatible with all GAL 20V8/AS ■ Electrically erasable CMOS technology |
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PALCE20V8H-10 24-Pin 20V8/AS -5/91-O | |
Contextual Info: n AMENDMENT Advanced Micro Devices CMOS Memory Products 1991 Data Book Handbook Publication: Am27C256 PID# 08007F/1 Page 2-40 Amend this data sheet to add information on the TSOP package that is now available for this product. CONNECTION DIAGRAM TSOP Packages |
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Am27C256 08007F/1 27C256 WCP-26M-2/92-0 |