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    90V0 Price and Stock

    TE Connectivity 16P-090-[V003]

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    DigiKey 16P-090-[V003] Bag 74
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    TE Connectivity 20P-090-[V005]

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    DigiKey 20P-090-[V005] Bulk 117
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    • 10000 $29.59897
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    TE Connectivity 22S-090-[V004]

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    DigiKey 22S-090-[V004] Bag 231
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    TE Connectivity 20P-090-[V003]

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    DigiKey 20P-090-[V003] Bag 79
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    • 100 $34.86139
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    TE Connectivity 12P-090-[V005]

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    DigiKey 12P-090-[V005] Bulk 117
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    90V0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UL90V-0

    Abstract: T56M
    Text: BYT56A-BYT56M High Efficiency Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A DO - 27 Features Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation


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    PDF BYT56A-BYT56M DO--27 YT56J BYT56A BYT56G UL90V-0 T56M

    BYT 56M diode

    Abstract: byt 56m BYT56M BYT-56M BYT56A BYT56G 90V0
    Text: BL GALAXY ELECTRICAL BYT56A Z - BYT56M(Z) VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A HIGH EFFICIENCY ECTIFIERS FEATURES DO - 27 Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost High surge current capability Bevel round chip, aualanche operation


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    PDF BYT56A BYT56M DO--27 STD-202 BYT 56M diode byt 56m BYT-56M BYT56G 90V0

    rcl 3702

    Abstract: Mii53250 B0847 davis scott fluke 8050a digital multimeter HSSR-7110 Model 434 jl 54123 HP34401A optocouplers
    Text: 905 E. Walnut Street Garland, Texas 75040 TEL 972 272-3571 FAX (972) 494-2281 www.micropac.com Micropac Industries, Inc. MICROPAC INDUSTRIES, INC. HYBRID MICROELECTRONICS DIVISION RADIATION REPORTS 04/27/01 INTRODUCTION TO RADIATION TESTING REPORTS Micropac Industries Inc. (Mii) wishes to thank Ken Label of NASA Goddard Space Flight Center


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    PDF Br-81 Cl-35 I-127 rcl 3702 Mii53250 B0847 davis scott fluke 8050a digital multimeter HSSR-7110 Model 434 jl 54123 HP34401A optocouplers

    BALLAST MOTOROLA

    Abstract: circuit diagram electronic ballast for 32W tube l ELECTRONIC BALLAST DIAGRAM 1000W fluorescent ballast schematic ELECTRONIC BALLAST dual DIAGRAM ballast circuit diagram 75w bq 80300 transistor Electronic ballast transistor ballast 1000W ELECTRONIC BALLAST transistor DIAGRAM
    Text: ARE402/D THE FI FCTRONIC .%? CONTROL &$;’” Reprinted December MOTOROLA @ Semiconductor Products by permission of ELECTRONIQUE 1988 Issue, 01988 SPS, All Rights DE PUISSANCE, Reserved. THE ELECTRONIC CONTROL OF FLUORESCENT TUBES ,., ‘, . Prepared by:


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    PDF ARE402/D BALLAST MOTOROLA circuit diagram electronic ballast for 32W tube l ELECTRONIC BALLAST DIAGRAM 1000W fluorescent ballast schematic ELECTRONIC BALLAST dual DIAGRAM ballast circuit diagram 75w bq 80300 transistor Electronic ballast transistor ballast 1000W ELECTRONIC BALLAST transistor DIAGRAM

    GP2L23L

    Abstract: GP2L23R 90V0
    Text: GP2L23L/GP2L23R GP2L23L/GP2L23R Compact, Win ~pe Photointerrupter • Features ■ OulSne Dimensions 1. Correspond to prism system 2. Compact and thin Thickness : 3mm (Unit : mm) Internal connection diagram GP2L23L GP2L23R Z A~tions 1. Specified for tape-end detection for digital


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    PDF GP2L23L/GP2L23R GP2L23L GP2L23R GP2L23L GP2L23R 90V0

    Untitled

    Abstract: No abstract text available
    Text: pow w p0/ [ s O 9 E d iu o /e u jo i|/ L A3d do L 6¿¿00 ON ONIHVda 3QOO 39V0 'AddNdssv 3Z ] 5 ,0£o0t -T -T CSOO•] £1 'Or -T -T 03d5 NOUVOIlddV 89 J3ds lonaodd Noxia ’a i d o d 3HVN 56/5 L/eO 8 0 9 £ - S 0 L¿ L V d ' 6 j n q B | j j d h p e ^ D J o d jo o u ] dNV


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    PDF 0U1C-0043-01 04JUN01 P05ITI0N 04-JUN-01 arnp36051 /home/amp36051

    am27h10

    Abstract: No abstract text available
    Text: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military


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    PDF T-46-13-29 -45ns Am27C010 Am27H010 withtheAm27C010 KS000010 2750-006A am27h10

    Untitled

    Abstract: No abstract text available
    Text: 10 - 4-7.00 -— - 7 1 .0 0 - I— — 1 O O T Y P w- F F N T F R I IN F OF 1 7 8 FO MIN F F A T IJ R F 153.00 MAX • 107.00 MAX ■ -128.60 MIN 6.10


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    PDF 240CKTS SD-78603-001

    Untitled

    Abstract: No abstract text available
    Text: 10 PART NUMBER GET W/CAP IN TUBE SIZE DIM. A DIM. B -AMAX.- ’.00 TY P n _ n 0 - - S m H - 1.10 2 2.00 2.00 8 7 3 2 0 - 0 6 *5 6 6.00 2.00 8 7 3 2 0 - 0 8 *5 8 8.00 6.00 873Y0-10*5 10 10.00 8.00 87320-12*5 12 12.00 10.00 8754-0-14-965 14 15.00 12.00 87320-16*5


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    PDF 873Y0-10

    AD6604

    Abstract: 0100152
    Text: pow wp0/^6ot7dw o/eujoi|/ £ ¿6 0 ^ 0 ^ 0 : 8t7 ; 0 L t^ G A V N G O L dO L A3d 133H5 9 N 31V0S I M ¥ d Q d 3 W o N iH v a a 3Q 09 39V9 3 i n a o u ' n o i i i s o d 009 À19W999V dl OVl dd Od d ioa / snid osi S 3 W 9 £ - S l i L p V d e ^ ' B D J o d j n


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    PDF 09MAY94 25-JAN-01 arnp40973 /home/Qmp40973/edmmod AD6604 0100152

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27H010 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 45 ns — Typical program m ing tim e of 16 seconds ■ JEDEC-approved pinout — Plug in upgrade of standard 1 Mbit EPROMs


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    PDF Am27H010 28-pin 32-pin

    Untitled

    Abstract: No abstract text available
    Text: a Prelim inary A m 27H 010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Industry's fastest ■ Versions available in industrial and military temperature ranges -45ns 1 megabit CMOS EPROM ■ ± 10% power supply tolerance available


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    PDF -45ns Am27H010 Am27C010 CP-11M

    ZD - 98F

    Abstract: ZD 98F
    Text: 12 13 DISCRETE CONN. SIZE NO OF CONN. IN CHAIN 11 DIM. C .998 2.59 2.756 70.00 .390 90327 .197 5.00) 2.953 75.00 .489 .295 7.59) 2.756 70.00 .587 14.92) .390 10 . 0 0 ) 2.756 70.00 .092 12.50) 2.556 65.00 .591 15.90) 2.952 75.00 .689 17.59) 2.061 62.56 20.09


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    PDF SDA-42219-* ZD - 98F ZD 98F

    AM27H010

    Abstract: AM27H01055DC CERAMIC LEADLESS CHIP CARRIER LCC 32 socket
    Text: FINAL i A m 2 7 H l Advanced Micro Devices 0 1 0 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 45 ns ■ JEDEC-approved pinout — Typical programming time of 16 seconds


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    PDF Am27H010 28-pin 32-pin Am27H0l operateH010 KS000010 12750D-9 AM27H01055DC CERAMIC LEADLESS CHIP CARRIER LCC 32 socket

    323CL

    Abstract: 331CL
    Text: a Advanced Micro Devices Am27H010 1 Megabit 131,072 x 8-Bit High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 45 ns ■ JEDEC-approved pinout — Typical programming time of 16 seconds ■ Latch-up protected to 100 mA from -1 V to


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    PDF Am27H010 28-pin 32-pin Am27H0l 12750D-8 KS000010 323CL 331CL

    AMD am2 socket pinout

    Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
    Text: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds


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    PDF Am27H010 28-pin 32-pin KS000010 12750D-9 Atn27H010 AMD am2 socket pinout amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD 50raW