9149 Search Results

IRL540N

Contextual Info: PD - 91495A IRL540N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.044Ω G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier

IRFP3710

Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: B&B ELECTRONICS P#9149R1_9PMDS-2613-1/1 Model 9PMDS 9-Pin Modem Data Splitter The Modem Data Splitter is a device that can connect two computers or terminals to one modem without switching. The modem data splitter can be used to combine two 9-pin DTE ports to one 9-pin DCE port.

Contextual Info: 134 Marbledale Road, Tuckahoe, NY 10707 Tel: 914914-793 793-0700 Fax: 914 914-793 793-4527 www.jonard.com APPENDIX 6b SUMMARY REPORT FOR SIX-SIGMA PILOT STUDY MAGNAMOLE CABLE THREADER April 2007 CONFIDENTIAL SUMMARY OF METRICS SUMMARY OF DMAIC STEPS DATA ANALYSIS

IRLL014N

Contextual Info: PD- 91499B IRLL014N HEXFET Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.14Ω G ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier

IRL520N

Abstract: IRL520
Contextual Info: PD - 91494A IRL520N HEXFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET D VDSS = 100V RDS on = 0.18Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

IRFP3710

Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: H ERM ETIC S E A L LA U N C H ER S FOR .0 1 8 " D IA M ETER P IN S S tra ig h t Jack 1 /2 " S quare Flange 9049 9513-000 - Optional packaging: 9149 9513-000 Includes 920-56 9249 9513-000 (Includes 920-56 and 907-111-2) 9349 9513-000 (Includes 907-111-2)

IRFP3710

Abstract: irf 460A TO-247AC Package IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: P D -91494A International IOR Rectifier IRL520N H EXFET Pow er M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R DS on = 0.1 8£2

IRL520N

Abstract: IR 60A, 100V Mosfet
Contextual Info: PD - 91494A IRL520N HEXFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET D VDSS = 100V RDS on = 0.18Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

A3-113

Contextual Info: I PART ND. I A3113— 0 ~ REV B1 DATE APP 0 5 -0 8 -0 2 SKP ECO 91491 ,075 A LATCH BOX MECHANICALLY SECURED, FRONT & BACK AND BONDED REF: HONEYWELL 8 5 2 1 6 7 8 -4 3 -TOLERANCESUNLESS OTHERWISE NOTED _ DIMENSIONS IN INCHES_ O m n e t ic s C onniïc t o r C o rpo r atio n

Contextual Info: This document was generated on 07/23/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 39-29-9149 Active Mini-Fit Jr. 4.20mm Pitch Mini-Fit Jr.™ Header, Dual Row, Vertical, with Snap-in Plastic Peg PCB

wickmann

Contextual Info: MINIATURE FUSES WICKMANN IEC 60127-2/SS 5 Series 181 10 m m 0-Lag 2 5Txime 0 ,0 00 Tim e -c urren t characteristic s • FaxBack Document # 203 M in -M ax Limits ,0 0 Brass caps, nickel-plated 1 ,0 • Approvals: 00 10 VDE: File No. 71629 SEMKO: File No. 9149159

IRL540N

Contextual Info: PD - 91495A IRL540N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.044Ω G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier

a3114

Contextual Info: I PART ND. I A 3 1 1 4 —0 ~ REV B1 A ECO 91491 DATE APP 0 5 -0 8 -0 2 SKP LATCH BOX MECHANICALLY SECURED, FRONT & BACK AND BONDED REF: HONEYWELL 8 5 2 1 6 7 8 -6 3 -TOLERANCESUNLESS OTHERWISE NOTED _ DIMENSIONS IN INCHES_ O mnetics C onniïctor C orporation

n0243

Abstract: 2Sa 536 2SC39 2SC3951 SA153
Contextual Info: Ordering number: EN 2435A 2SA1536/2SC3951 N0.2435A PN P/N PN E pitaxial P lan ar Silicon Transistors SAHYO i High-Definition CRT Display Video O utput Applications Applications • High-definition CRT display video output, wide-band amp Features • H igh f'jp: fT = 600MHz

chn 840

Abstract: chn 809 ST cny 17 g3 CNY 817 CHN 841 CNY 417 626 T40 NOG CHN 628 CHN 849 845 bios chip
Contextual Info: MIL-M- 38 51 0/ 17 8A 30 April 1984 SUPERSEDING MI L- M- 38 51 0/ 17 8 28 June 1979 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, M U L T I P L E XE RS /D EMU LT IP LE XE RS MO NO LI TH IC SILICON, POSITIVE LOGIC This specification is approved for use by all D e p a r t ­

bgs2

Abstract: BGS3 tb 9207 5566-NB6S MOLEX mxj a2 ag52 SD-5566 je 243 08-B5 mxj A2 connector
Contextual Info: 10 co 'ST LO 4 .2 — DIM. A FIn n FI M M 6 |t QSO FIn n I4I5In n MM fl«l ,|CMM 6il16m FIn n 14II51 FIn n 14H51pin FI M 7|b M 10II1MM »il6M m T n 4 n n n MMn n MM lo) n I MM I 1? 13 IS IT 20 n n n MMFin MMn n !TI 18MM m 1 3I 14 B FIn n 14I516^ FIn n MMFin n n n MMFin 1BI31

04A21

Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Contextual Info: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6

forth dimension displays

Abstract: SIHU3N50D-GE3
Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20

DR500

Abstract: DR3003 DR1200 DR800
Contextual Info: AMERICAN/ELECTRONIC b3E I> • Db?b7M3 OOOIGOI W «EDI FAST RECOVERY HIGH VOLTAGE 25 mA MINIATURE SILICON RECTIFIERS • SMALL SIZE M O LDED PACKAGE • PRV 3,000 TO 12,000 VO LTS • A VA LA N CH E CHARACTERISTICS • LOW LEAKAGE EDI Type PRV Volts COLOR

lr 014

Abstract: ultra fast recovery time diode
Contextual Info: AMERICAN/ELECTRONIC b 3 E ]> • 0 b 7 b?i|3 0 0 0 1 1 1 3 SMI « E D I NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a pro­