930 TSSOP8 Search Results

SDU3055L2

Abstract: STU9916L SDM8401 STM820 stu6025nl STU3525NL 635-75 STU2040PL SDP55N03L STM9435
Contextual Info: Selection Guide - Mosfet Product update:2005/03/3 Part No. SDM4410 STM4410A SDM4800 STM4800A SDM40N02 SDM4884 STM4884A STM7821 STM7822 STM7822A STM9410 STM9410A STM9433 STM9435 SDM9435A STM4431 STM4433 STM4433A SDM4435 STM4437 STM4437A STM4439 STM4439A STM6375

Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1871 TSSOP-8 Features Unit: mm Can be driven by a 2.5-V power source Low on-state resistance RDS on 1 = 26 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 27 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 38 m TYP. (VGS = 2.5 V, ID = 3.0 A)

Contextual Info: AP6800GEO Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 ▼ Capable of 2.5V gate drive D2 ▼ Optimal DC/DC battery application S2 S1 TSSOP-8 G1 S1 BVDSS 20V RDS ON 20mΩ ID D1

Contextual Info: AP6800GEO Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET  Low on-resistance G2 S2 D2  Capable of 2.5V gate drive  Optimal DC/DC battery application S2 S1 TSSOP-8 G1 S1 BVDSS 20V RDS ON 20m ID D1 6  RoHS compliant

930 TSSOP8

Abstract: NTQD6866T1 NTQD6866 NP1F
Contextual Info: NTQD6866 Product Preview HDTMOS3e TSSOP-8 Dual, Common-Drain Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • • New Low Profile TSSOP–8 Package Ultra Low RDS on Higher Efficiency Extending Battery Life

passive rfid tag circuit diagram

Abstract: 2.4 ghz passive rfid circuit diagram of very long range rfid UCODE HSL 2.45 ghz passive rfid IC RFID 2.45 GHz 4835 UHF rfid short range reader 860 Mhz AIAG SL3S30
Contextual Info: INTEGRATED CIRCUITS SL3ICS30 01 UCODE HSL Short Form Specification Revision 3.0 October 2003 069730 Philips Semiconductors Short Form Specification, Revision 3.0 October 2003 UCODE HSL SL3ICS30 01 CONTENTS 1 DESCRIPTION 3 1.1 Contactless Energy and Data Transfer

D2017m

Abstract: FTD2017M A1176 d2017 A11763 FTD2017
Contextual Info: FTD2017M Ordering number : ENA1176 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017M General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting.

C0603K

Abstract: C-USC0603K C-USC0603 C-EUC0402 c0603k with voltage rating 057-040-0 Si4031 SX-2520 XTL581200JIG L-USL0402
Contextual Info: S i 4 0 3 1/32 Si4031/32 ISM T R A N S M I T T E R Features              Integrated 32 kHz RC or 32 kHz XTAL Integrated voltage regulators Configurable packet structure TX 64 byte FIFO Low battery detector Temperature sensor and 8-bit ADC

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1871 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1871 is a switching device which can be driven directly by a 2.5-V power source. The µPA1871 features a low on-state resistance and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1871 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1871 is a switching device which can be driven directly by a 2.5-V power source. The µPA1871 features a low on-state resistance and

uhf pcb antenna

Abstract: UHF rfid antenna RFID loop antenna design nxp proximity antenna design NXP UCODE G2XM Types of Radar Antenna UHF RFID pcb antenna chip antenna rfid UHF FR4 substrate with dielectric constant 4.4 nxp rfid uhf transponder
Contextual Info: AN 1715 UHF RFID PCB antenna design Rev. 3.0 – January 21 2010 Application note Document information Info Content Keywords UCODE EPC G2, G2XM, G2XL, Reference Design, Antenna Design, PCB Abstract This application note provides basic antenna knowledge, which is

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1874B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1874B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA1874B features a low on-state resistance and

NON polarized capacitor 1uf

Abstract: si4431 crc error Siward crystal xtal SI4431 WD-1 ATB40
Contextual Info: Si4431 Si4431 ISM T RANSCEIVER Features           Frequency Range = 240–930 MHz Sensitivity = –118 dBm +13 dBm Max Output Power Configurable –8 to +13 dBm Low Power Consumption 18.5 mA receive 28 mA @ +13 dBm transmit

Si4432

Abstract: UPG2214TB6SM SI4432-V2-FM SMQ32SL SI4432-V2 d1dt 2.4 GHz spiral antenna
Contextual Info: Si4432 Si4432 ISM T R A N S C E I V E R Features           Frequency Range = 240–930 MHz Sensitivity = –118 dBm +20 dBm Max Output Power Configurable +11 to +20 dBm Low Power Consumption 18.5 mA receive 27 mA @ +11 dBm transmit

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1871 N チャネル パワーMOS FET スイッチング用 工業用 µPA1871 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）

stu407d

Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
Contextual Info: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

PA1874B

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1874B N チャネル MOS FET スイッチング用 µ PA1874B は，2.5 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SiS376DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0058 at VGS = 10 V 35 0.0084 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested