935NM Search Results
935NM Price and Stock
TT Electronics plc OPB732WZOptical Switches, Reflective, Phototransistor Output Reflective Sensor |
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OPB732WZ | Bulk | 15,175 | 25 |
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TT Electronics plc OP133Infrared Emitters High Intensity 935nm |
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OP133 | Bulk | 15,100 | 50 |
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TT Electronics plc OP999Photodiodes Narrow Rcvng Angle 935nm |
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OP999 | Bulk | 11,527 | 6 |
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TT Electronics plc OPB822SDOptical Switches, Transmissive, Phototransistor Output DUAL SLOTTED 20mA 30V |
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OPB822SD | Bulk | 3,900 | 50 |
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TT Electronics plc OPL561-OCAPhoto IC Sensors Photologic Lateral |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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OPL561-OCA | Bulk | 3,849 | 3 |
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935NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Silicon Phototransistor in SMT Plastic Package OP580 • • • Wide Acceptance Angle Fast Response Time Plastic Leadless Chip Carrier PLCC The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is |
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OP580 OP580 OP280 | |
OP955Contextual Info: 0 . OPTEK Product B ulletin O P955 June 1996 PIN Silicon Photodiode Type OP955 Features • Wide receiving angle • Linear response vs. irradiance • Fast switching time • Side-looking package ideal for space limited applications D escription The OP955 devices consists of a PIN |
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OP955 OP955 | |
T35 diode
Abstract: ndm diode diode L2.70 OP165W OP505W diode T35 diode T35 -4-D6
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OP165W OP165W OP505W 935nm T35 diode ndm diode diode L2.70 OP505W diode T35 diode T35 -4-D6 | |
OP140
Abstract: OP140A OP140B OP140C OP140D OP140SL OP550 OP560
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OP140A OP140A, OP140B, OP140C, OP140D OP140C OP140B OP140 OP140A OP140B OP140C OP140D OP140SL OP550 OP560 | |
high sensitivity phototransistor four-lead
Abstract: op272 OP273 phototransistor four-lead OP270 OP271 OP570 phototransistor 600 nm
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OP570 OP270 OP270 OP271 OP272 OP273 high sensitivity phototransistor four-lead op272 OP273 phototransistor four-lead OP271 phototransistor 600 nm | |
OP250
Abstract: OP522
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OP522 OP522 OP250 | |
Contextual Info: OPTEK TECHNOLOGY INC 2?E D B bTTflSSO QOQÜbQI D 0>B OPTEK Product Bulletin OPC 6OX July 1989 Replaces January 1985 • NPN Silicon Phototransistor Chip .T-m-w Type OPC6QX Features Absolute Maximum Ratings *1\T a = 25°C unless otherwise noted • 2.7 times the active area of OPC 6OOL |
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935nm, | |
ee 3007Contextual Info: <0 o p te k Product Bulletin OPL 8OOTXV June 1993 Hi-Reliability Photologic Hermetic Sensors Type OPL8OOTXV Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • 100% screened and quality conformance tested to Optelis Hi-Rel program |
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OP235/OP236TX/TXV MIL-STD-883 ee 3007 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
OP165W
Abstract: OP505W
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OP165W OP165W OP505W 935nm OP505W | |
K-5550
Abstract: K5550 OP290C OP555 OP555A OP555B OP555C OP555D VRL1
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OP555A OP555A, OP555B, OP555C, OP555D OP555 OP290C K-5550 K5550 OP555B OP555C OP555D VRL1 | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. BPD-BQEA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) |
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BPD-BQEA34 BPD-BQEA34 935nm 935nm 1500pcs | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-RQB9DY-A SIDE- LOOK PACKAGE z PIN PHOTO DIODE ●Package Dimensions: 1. Wide receiving angle 5.0±0.1 .197±.004 2. Linear response vs. irradiance 3. Fast switching time 4.3±0.2 (.169±.008) 4. Side-looking Package ideal for space |
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935nm 935nm 11000pcs | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. BPD-C13A/QDA-37N SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ● Package Dimensions: ● Features 1. Wide receiving angle 2. Linear response vs. irradiance 6.2 .244 3. Fast switching time 15.5(.610) 4.7(.185) 4.End-looking Package ideal for space |
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BPD-C13A/QDA-37N BPD-C13A/QDA-37N 935nm 935nm 1250pcs | |
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Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-RQ09DV-1 For AB SIDE- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 2. Linear response vs. irradiance 3. Fast switching time 4. Side-looking Package ideal for space Limited applications |
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BPD-RQ09DV-1 BPD-RQ09DV-1 935nm | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-BQA331 END- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 3.00 .118 2. Linear response vs. irradiance 3. Fast switching time 5.30(.209) 0.81(.032) 4. End-looking Package ideal for space |
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BPD-BQA331 BPD-BQA331 935nm | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-BQDA34 END- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) 1.0(.039) |
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BPD-BQDA34 BPD-BQDA34 935nm | |
BPD-RQ03DV-1Contextual Info: BRIGHT LED ELECTRONICS CORP. BPD-RQ03DV-1 SINCE 1981 SIDE- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 2. Linear response vs. irradiance 3. Fast switching time 4. Side-looking Package ideal for space Limited applications |
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BPD-RQ03DV-1 BPD-RQ03DV-1 935nm | |
BPD-BQDA34Contextual Info: BRIGHT LED ELECTRONICS CORP. BPD-BQDA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) |
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BPD-BQDA34 BPD-BQDA34 935nm | |
BA QB
Abstract: BPD-BQBA34
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BPD-BQBA34 BPD-BQBA34 935nm 1500pcs BA QB | |
Contextual Info: BRIGHT LED ELECTRONICS CORP. BPD-BQBA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) |
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BPD-BQBA34 BPD-BQBA34 935nm 500pcs | |
OP573Contextual Info: Silicon Phototransistor OP570 Series OP570 Features: x x x x x SMD plastic package High photo sensitivity Fast response time Choice of four lead configurations IR transmissive plastic package OP573 OP571 OP572 Description: Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an |
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OP570 OP570 OP573 OP571 OP572 OP270 | |
Contextual Info: Product B ulletin O P130W b7TßSßO 00025S3 öbl “ OPTEK M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, 0P131W, OP132W, OP133W .a Features A b so lute M axim um Ratings T a = 25 ° C unless otherw ise noted • Wide irradiance pattern • Enhanced temperature range |
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P130W 00025S3 QP130W, 0P131W, OP132W, OP133W OP830WSL 100mA T65flD 0002SSH | |
Contextual Info: 0 . OPTEK Product Bulletin OP9SO Jun e 1996 PIN Silicon Photodiode Type OP950 Features • • • • Wide receiving angle Linear response vs. irradiance Fast switching time Side-looking package ideal for space limited applications Description The OP950 device consists of a PIN |
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OP950 OP950 00D2bfci4 |