945 MOSFET N Search Results

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

transistor d 945

Abstract: 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB

102N06

Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
Contextual Info: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product

c 945 TRANSISTOR equivalent

Abstract: 9601 mosfet 9450 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

RF-35-0300

Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

945 mosfet n

Abstract: 93F2975 c17 dual mos 9450 transistor 52169
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it

MRF9045MR1

Abstract: TO270
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

us 945 mosfet

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

93F2975

Abstract: transistor WB1
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

MARKING WB1

Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MARKING WB1

Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

945 TRANSISTOR

Abstract: marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 8, 9/2008 RF Power Field Effect Transistor MRF9030LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Motorola 0936

Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
Contextual Info: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF9030N

Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF9045N

Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device