9526 Search Results

from 9822

Abstract: 9529 LT1579 LT1521 LT1528 LT1529 LT1528 equivalent
Contextual Info: RELIABILITY DATA LT1521 / LT1528 / LT1529 / LT1579 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SOIC/SOT/MSOP SSOP/TSSOP DD PACK TO-220 535 9526 39 9740 50 0042 158 9526 782 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE

Contextual Info: PD - 95260 IRF9410PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V

Contextual Info: PD - 95269 IRF7842PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS on at 4.5V VGS

F7101

Abstract: IRF7603 IRF7101 IRF7403 IRF7413 IRF7403 equivalent
Contextual Info: PD - 95260 IRF9410PbF l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V

IRF7319PBF

Abstract: irf MOSFET p-CH
Contextual Info: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description

24V 10A SMPS

Abstract: EIA-541 F7101 IRF7101 9526
Contextual Info: PD- 95268 IRF7458PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits

Contextual Info: PD - 95266A IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD- 95268 IRF7458PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: F20 / *0(-% + ///3 (/ *+(%. 3(3-$ & &0%.92.:60BA070FA0)*; .*;<9.: C 6-<:;92*403'FA40205.-2,*40:*/.;@0*8897=*4: C00-*8;.90/790!09*24057<6;260 C00%2604.60-<*40*6-0;9284.07<;8<;: C00'62=.9:*40268<;0F070CE(*,

Contextual Info: PD-95265 IRF7811AVPbF IRF7811AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free

Contextual Info: PROJECT NAIE : 9526 FR O N T VIEW Pin# A s sig n m e n t 1 Left 2 Left se n se 3 R igh t se n se 4 Right 5 Bo tto m 6 B o tto m 7 Top se n se 8 Top se n se o fO o 8 P in 2 . 5 4 m m P it c h F e m ó le C o n n e c t o r -H ITO .50 MAX. NOTES: UV G LUE X

irf 1340

Abstract: 95266 HEXFET SO-8 transistor IRF 7101 EIA-541 F7101
Contextual Info: PD - 95266 IRF7331PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF7811AVPBF

Abstract: F7101 IRF7101 IRF7811AV 10BQ040 EIA-541
Contextual Info: PD-95265 IRF7811AVPbF IRF7811AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

Contextual Info: PD - 95263 IRLBA3803PbF l l l l l l l Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 0.005Ω

IRF5852

Contextual Info: PD - 95261A IRF5852PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A

LT928

Abstract: LT927 LT1166 equivalent LT1166 LT1794 LT6300 LT6301 R412 0534
Contextual Info: RELIABILITY DATA LT927 / LT928 / LT1166 / LT1794 / LT6300 / LT6301 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE PLASTIC DIP SSOP/TSSOP NEWEST DATE CODE 80 9526 127 0040 207 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH

0234

Abstract: LTC1261 R320 9449
Contextual Info: RELIABILITY DATA LTC1261 / 1429 / 1430 / 1550 / 1551 / 3830 / 3831 / 3832 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP 116 9726 48 9526 709 9426 873 • PRESSURE COOKER TEST AT 15 PSIG, +121°C

10BQ040

Abstract: EIA-541 F7101 IRF7101 IRF7811AV 2440 so-8
Contextual Info: PD-95265 IRF7811AVPbF IRF7811AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free

Contextual Info: PD - 95267 IRF7319PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V VDSS

Contextual Info: PD - 95263A IRLBA3803PbF l l l l l l Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 0.005Ω G ID = 179A† S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

k 1542

Abstract: SOT 213 LTC1440 LTC1841 9540 9741 54365
Contextual Info: RELIABILITY DATA LTC1440 / 1441 / 1442 / 1443 / 1444 / 1445 / 1531 / 1540 / 1541 / 1542 LTC1841 / 1842 / 1842 / 1843 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE PLASTIC DIP SOIC/SOT/MSOP 278 9526 195 9640 473 • PRESSURE COOKER TEST AT 15 PSIG, +121°C

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing