9612 Search Results

BAS286

Abstract: BAS286-GS08
Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009

BAV203

Abstract: BAV200 BAV200-GS18 BAV201 BAV202
Contextual Info: BAV200, BAV201, BAV202, BAV203 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon epitaxial planar diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009 Applications

sod80 diodes color code

Abstract: BA982 BA982-GS08 BA983
Contextual Info: BA982, BA983 Vishay Semiconductors Band Switching Diodes FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • QuadroMELF package 9612009 • AEC-Q101 qualified MECHANICAL DATA • Compliant to RoHS directive 2002/95/EC

Contextual Info: I s: I File N o .l SGVE-9612-8814-SA ISHEET 1 / SPECIFICATION j 02.30- a Shielded- o o o o-in -No Shield g H f o l -o CN ri i C o n ta ct:0 O .4 6 m m P ho sph or Bronze Gold Plated 6 u ” Matel S h ie ld :0 .2 5 m m Thick Copper Alloy T in /L e a d Plated

Contextual Info: s: I I File No.l SGVE-9612-8813-SA ISH EET 1 / SPECIFICATION j 02.30 15.9 Shielded- Housing:PBT Polyester UL 94V—0 Mixed Glass Fiber Contact:0O.46mm Phosphor Bronze Gold Plated 50u” Matel Shield:0.25mm Thick Copper Alloy Tin/Lead Plated 15.00 13.8 -No

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 May-96 9612 E2 OMEDATA DD547317AGA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-17479, P-17575 READPOINT

x 33 t135

Abstract: RTE135
Contextual Info: R Raychem Corporation 300 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PRODUCT: RTE135 DOCUMENT: SCD 24308 PCN: 961293 REV LETTER: B REV DATE: MARCH 26, 1999 PAGE NO.: 1 OF 1 PolySwitch PTC Devices Resettable Fuse Specification Status: RELEASED

912E

Abstract: FC9612 9612E 9612
Contextual Info: - 102- Dual D iff Line D river 9612 f& a fe íí H f6] MIN TYP 9 MAX ¥ ÍSl a *8 5 .2 5 V 50 mA TI L —»H 30 ns FC H—*H 30 ns NS ±35 ns MOT 4 .7 5 V cc 42 le e 9 6 1 2 /A /E tpd ts skew S ig AM D w RAY MMI In tel SPR 14 IT T A hi V il = 0 .4 V IlH V ih = 2 . 4 V

Contextual Info: BA1282, BA1283 Vishay Semiconductors Band Switching Diodes FEATURES • • • • • 9612315 • • • • • MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel 8 mm tape , 10K/box

Contextual Info: BA979, BA979S Vishay Semiconductors RF PIN Diodes - Single in QuadroMELF SOD-80 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications 9612009 • Current controlled HF resistance in adjustable

Contextual Info: BAV200, BAV201, BAV202, BAV203 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon epitaxial planar diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009 Applications

Contextual Info: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009

Contextual Info: BAQ133, BAQ134, BAQ135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications 9612009

melf diodes color code

Abstract: general semiconductor DIODE SOD80
Contextual Info: BAV200/BAV201/BAV202/BAV203 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon epitaxial planar diodes • Lead Pb -free component • Component in accordance to RoHS 2002/ 95/EC and WEEE 2002/96/EC e2 9612009 Applications

Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009

vishay ls4148

Abstract: 1N4148 diode SOD 80 MELF 4148
Contextual Info: LS4148 / LS4448 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diodes • Electrical data identical with the devices 1N4148 and 1N4448 respectively • Quadro Melf package Applications 9612009 Extreme fast switches

ADV9617

Abstract: altera date code format altera "date code format" Date Code Formats altera Date Code Formats on alpha year and work week ALPHA NEW YEAR DATE CODE ALPHA YEAR DATE CODE ALPHA YEAR CODE mark six
Contextual Info: CUSTOMER ADVISORY DATE CODE FORMAT Effective immediately, Altera will adopt a six character date code format. This advisory summarizes and explains the format of Altera’s date codes on the top-side mark and on the bar code labels. PCNs 9501 and 9612 issued Jan’95 and Jun’96, respectively, announced Altera’s intent

BAS286

Abstract: BAS286-GS08
Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009

Contextual Info: BA979, BA979S Vishay Semiconductors RF PIN Diodes - Single in QuadroMELF SOD-80 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications 9612009 • Current controlled HF resistance in adjustable

DS1267

Abstract: P-17298
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Apr-96 9612 A1 HYUNDAI DL603183AAL 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-17251 READPOINT (Sample Size/No. of Fails)

82315

Contextual Info: PM2SS1 VISHAY Vishay Semiconductors PM2SS1 Package Dimensions in mm 9612211 Document Number 82315 Rev. 1.1, 30-Jul-04 www.vishay.com 1 PM2SS1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

BAS386

Abstract: BAS386-TR BAS386-TR3
Contextual Info: BAS386 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612315

BUK9512-55B

Abstract: BUK9612-55B
Contextual Info: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: BAQ333 / 334 / 335 VISHAY Vishay Semiconductors Switching Diode Features • • • • Silicon Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints 9612315 Mechanical Data • Electrical data identical with the devices BAQ33.BAQ35 / BAQ133.BAQ135