9642 Search Results

RS 119-299

Abstract: RS 119-306 BCX19 9642 3.5 digits lcd display low bat
Contextual Info: 9642 Issued March 1994 31/2 Digit LCD Module Instruction Leaflet RS stock no. 119-299 DPM 1 RS stock no. 119-306 DPM 1S Æ Æ Æ Æ Æ Ultra Compact 5.5mm digits Ultra-low power Snap-in integral bezel Single rail version RS stock no.119-306 The meter uses advanced components and the latest miniaturisation techniques to

M9642

Abstract: dm9640 9642d 9642
Contextual Info: 9640/26S10 • 9 641/26S 11 • 9642 QUAD GENERAL PURPOSE BUS TRANSCEIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N The 9640, 9641 and 9642 are High-Speed Qua<} Bus Transceivers. Each driver output, which is capable of sinking 100 mA at 0.8 V, is con­

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 96426 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • • • AUIRF7759L2TR AUIRF7759L2TR1 Automotive DirectFET Power MOSFET ‚ V BR DSS 75V RDS(on) typ. 1.8mΩ max. 2.3mΩ

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2180A Nov-96 9642 B3 ANAM, K. DN634588AAA1 2.0µ OXIDE 44 PLCC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Nov-96 9642 E3 OMEDATA DD623657AGA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-18586, P-18645 READPOINT

9642DC

Abstract: 9642 9641 PH 9640 9642DM 9642PC AM26S10 AM26S11 h 9649 MAX9640
Contextual Info: 9640/26S10 • 9641/26S 11 • 9642 QUAD GENERAL PURPOSE BUS TRANSCEIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N The 9 6 4 0 , 9 641 a n d 9 6 4 2 a re H ig h -S p e e d Q u a ^ B u s T ra n sce ive rs. Each d riv e r o u tp u t, w h ic h is ca p a b le o f s in k in g 1 0 0 m A at 0 -8 V, is c o n ­

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

DS1669

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1669 Nov-96 9642 B3 OMEDATA DD628106AAA 1.2µ OX/NI EEPROM 08 SOIC 200 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C):

1E-005

Abstract: GD160C
Contextual Info: PD - 96421 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 250V RDS(on) typ. 32mΩ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile

igbt based welding machine

Abstract: IRFR12
Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

f9640

Abstract: IRF9640 9641 IRF9640.9641 IRF9643 IRF9642 IRF9641 9642
Contextual Info: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 FEATURES • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polyslllcon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

P-18733

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1669 Nov-96 9642 B3 OMEDATA DD628106AAA 1.2µ OX/NI EEPROM 08 SOIC 208 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C):

TYPE 121C

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2180A Nov-96 9642 B3 ANAM, K. DN634588AAA1 2.0µ OXIDE 44 PLCC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

8361H

Abstract: CY7C4265 JESD22
Contextual Info: Qualification Report December 1996, QTP# 96421, Version 1.0 SYNCHRONOUS FIFOs - R3.0 TECHNOLOGY CY7C4255/4265 8K/16K x 18 Synchronous FIFOs CY7C4261/4271 16K/32K x 9 Synchronous FIFOs PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

10a 400V ultra fast diode d2pak

Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

IRF9640 irf9240

Abstract: irfp 9640 IRF9640 semiconductor IRF 9640 9243 f9640 IRF9642 FP9240 irfp9240
Contextual Info: D 98D 05420 _7964142 S A MS UN G SE MIC O N D U C T OR INC_ IRF9240/9241/9242/9243?-^l ^b4ji4d uuuò4du . f "V * ir m ii V k L ~ ’ IRFP9240/9241/9242/9243 POWER MOSFETS IRF9640/9641 /9642/9643 Tfl Preliminary Specifications D E | 7 cì b 4 1 , 4 2 000S4S0

AUIRF7478Q

Contextual Info: PD- 96423A AUTOMOTIVE GRADE AUIRF7478Q HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

halogen transformer

Abstract: "VDSS 800V" mosfet AUIRF7759L2TR
Contextual Info: PD - 96426 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • • • AUIRF7759L2TR AUIRF7759L2TR1 Automotive DirectFET Power MOSFET ‚ V BR DSS 75V RDS(on) typ. 1.8mΩ max. 2.3mΩ

Contextual Info: PD - 96421 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 250V RDS(on) typ. 32mΩ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile

Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

Contextual Info: PD- 96423A AUTOMOTIVE GRADE AUIRF7478Q HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

9643

Abstract: 9642 FS9640
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642Z9643 FEATURES • • • • • • * TO-220F Lower Rds on Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: | | | Search Products Documentation Resources My Account Home > Products > By Type > Product Feature Selector Customer Support > Product Details 964274 - 2 Product Details Quick Links Timer Contacts Always EU RoHS/ELV Compliant 964274 Statement of Compliance