96BALLS Search Results

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

samsung ddr3

Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

NT5CB256M16bP-DI

Abstract: NT5CB256M16 NT5CC512M8BN NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP
Contextual Info: NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP Speed Bins -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Units tCK Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Clock Frequency

Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

K4B2G1646C-HCH9

Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB128m16FP

Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe

K4W2G1646E-BC11

Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
Contextual Info: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB256M16

Abstract: NT5CC256M16 4Gb DDR3 SDRAM nanya ddr3 DDR3 DIMM SPD JEDEC
Contextual Info: 4Gb DDR3 SDRAM B-Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min. Max. Min.

NT5CB256M8bN-cg

Abstract: calibration of dvm specifications NT5CB128M16BP-DI
Contextual Info: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.

NT5CB128M16FP

Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

K4B2G1646Q-BCK0

Abstract: K4B2G1646q
Contextual Info: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB64M16AP-BE

Contextual Info: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR) • Differential clock inputs (CK, CK)

Contextual Info: NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP 2Gb DDR3 SDRAM F-Die Feature

NT5CB128M16HP-EK

Contextual Info: NT5CB128M16HP NT5CC128M16HP 2Gb DDR3 SDRAM H-Die Preliminary Datasheet Feature Table 1: CAS Latency Frequency -BE* -CG -DI* -EK* DDR3 L -1066-CL7 DDR3(L)-1333-CL9

K4W1G1646D-EC15

Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

nt5cb128m16

Abstract: NT5CB128M16BP-CGI
Contextual Info: NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP 2Gb DDR3 SDRAM B-Die Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 DDR3-1866-CL12 Units Parameter Min. Max. Min. Max. Min.

Contextual Info: Rev. 1.0, Sep. 2012 K4B2G1646E 2Gb E-die DDR3L SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant 1.35V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB256M16

Abstract: NT5CB256m16bp NT5CB512M8BN-DII NT5CC256
Contextual Info: 4Gb DDR3 SDRAM B-Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min. Max. Min.

H5TQ2G63D

Abstract: H5TQ2G83DFR
Contextual Info: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.09 / Mar. 2012 1 Revision History

K4B2G1646E-BYK0

Abstract: K4B2G1646E-BYH9 K4B2G16
Contextual Info: Rev. 1.0, Sep. 2012 K4B2G1646E 2Gb E-die DDR3L SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant 1.35V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB256M16CP

Abstract: NT5CC256M16CP NT5CC256M16CP-DI NT5CC512M8CN DDR3-2133-CL14 NT5CB512M8CN NT5CC512M8CN-DII NT5CB512M8CN-CG NT5CB256M16 NT5CC256M16CP-DII
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -BE* -CG* -DI/DII* -EK* -FL* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Speed Bins Units tCK Parameter Min. Max. Min. Max.

NT5CB256M16BP-CG

Abstract: NT5CB256M16BP-DI
Contextual Info: 4Gb DDR3 SDRAM B­Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min.

NT5CB256M16

Abstract: NT5CC256M16 NT5CC256
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800