96MBIT Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed

ARINC 629 sim

Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Contextual Info: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■

M6MGD967W33TP

Abstract: 52-pin TSOP abzb
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

LRS1816

Abstract: LRS1B03 LRS1B04 LRS1B06 LRS1B07 sharp page buffer
Contextual Info: NEW PRODUCT INFORMATION LRS1B03/04/06/07 4-chip Stacked CSP Combination Memory < Outline > A multitude of multimedia services, including the distribution of information, electronic settlements of accounts and even TV-phones, are predicted thanks to improved baud rates in next generation cellular phones.

28F320W18

Abstract: Q939 Q943 28F640W18 q942 QC17 Q944 28F128W18 intel DOC Q938
Contextual Info: 1.8 Volt Intel Wireless Flash Memory 28F320W18, 28F640W18, 28F128W18 Specification Update July 2001 Notice: The 28F640W18 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are

M29DW256G

Abstract: M29dw256 spansion TSOP56
Contextual Info: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read

M6MGD967W33ATP

Contextual Info: Renesa LSIs Preliminary M6MGD967W33ATP Notice: This is not a final specification. Some parametric limits are subject to change. 100,663,296-BIT 6,291,456-WORD BY 16-BIT CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM & Stacked- µMCP (micro Multi Chip Package)

BA239

Contextual Info: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Target Information FLASH MEMORY K8P5615UQA 256Mb A-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

sck 103 capacitor

Abstract: TMS380C30 TI380C60A SINTEN SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA TMS380
Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method

LRS1815

Abstract: sharp LRS1331 sharp LRS1360 LRS1397 LRS1B03 LRS1B04 LRS1B06 LRS1B07 LRS1826 16M SRAM
Contextual Info: NEW PRODUCT INFORMATION LRS1397 96-Mbit Flash Memory + 4-Mbit SRAM Combination Memory * Under development < Outline > LRS1397, consisting of a 96-Mbit flash memory and a 4-Mbit SRAM, is a composite memory chip that is being developed by applying stacked CSP technology to integrate the constituent memories into a large-capacity, packaged memory.

TI380C30APGF

Abstract: sck 103 capacitor SINTEN TI380C60A relay srd SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA
Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method

Contextual Info: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics March 18, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 Low Power 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM

Contextual Info: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM

ACT-D1M96S

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks

SA204

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20900-1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system

TI380C60A

Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method

str W 6553

Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWSQ34 - MARCH 1998 Single-Chip Token-Ring Solution IBM Token-Ring Network™ Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method and Physical-Layer Specifications

Contextual Info: ADVANCED INFORMATION MX67L12816J3/MX67L9632J3 32M-BIT [4Mb x 8 or 2Mb x 16] Flash Plus 96M-BIT [12Mb x 8 or 6Mb x 16] MTP CMOS, 16M-BIT [2Mb x 8 or 1Mb x 16] Flash Plus 128M-BIT [16Mb x 8 or 8Mb x 16] MTP CMOS Flash Plus MTP MonoChip FEATURES • 2.7V to 3.6V operation voltage Output power supply

sck 103 capacitor

Abstract: TI380C60A SINTEN PC -1025 datasheet srd relay TMS380 TI380C25 TI380C30A TI380FPA TMS380SRA
Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method

Contextual Info: PRELIMINARY CYF2144V 144-Mbit Programmable Multi-Queue FIFOs 144-Mbit Programmable Multi-Queue FIFOs Features Functional Description • Memory organization ❐ Industry’s largest first in first out FIFO memory densities: 144-Mbit ❐ Selectable memory organization: x 9, × 12, × 16, × 18, × 20,

SA158

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed

TI380C60A

Contextual Info: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K x 48 x 2 Banks