9715 Search Results

IRFH7934TRPBF

Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits

DS2290

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2290 Mar-97 9715 K DALLAS DA090848 PCB SIPSTIK STRESS/JOB NO. READPOINT Sample Size/No. of Fails Hi Temp Storage 85°C, No Bias P-19521 336 Hr 1000 Hr

19663

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS5000T w/CR1620 Bat May-97 9715 D6 DALLAS DA092871 N/A 40 SBDIP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Hi Temp Storage 70°C, No Bias

9715

Contextual Info: RL-9715 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • SMD Power Inductor • • • ENVIRONMENTAL DATA • • Storage temperature range: -55°C to +130°C Operating temperature range: -40°C to +130°C Surface mount power inductors in a low profile

MARKING EK SOT-23

Contextual Info: PD - 97157 IRLML0100TRPbF HEXFET Power MOSFET VDS 100 V VGS Max ± 16 V RDS on max 220 m : 235 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML0100TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits

irg7s319

Contextual Info: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits

DA092

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS5000T w/CR1620 Bat May-97 9715 D6 DALLAS DA092871 N/A 40 SBDIP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Hi Temp Storage 70°C, No Bias

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2290 Mar-97 9715 K DALLAS DA090848 PCB SIPSTIK STRESS/JOB NO. READPOINT Sample Size/No. of Fails Hi Temp Storage 85°C, No Bias P-19521 336 Hr 1000 Hr

Contextual Info: 5 4 3 2 1 DRAWING NO. 40-9715HS REVISIONS 01 ENGINEERING RELEASE 06-13-12 Y Y G G L M D D C C B B A THIS DRAWING TO BE INTERPRETED PER ANSI Y 14.5M - 1994 SPECIFICATIONS: 1MATERIAL: ABS UL 94 HB METALIZED PLATSIC NICKEL PLATED 2、PLATING:SCREW & CLIP AND OTHER, NICKEL PLATED

Contextual Info: 5 P/N 4 Pins A B C D 40-9709M 9 30.80 24.99 16.92 19.20 40-9715M 15 39.15 33.32 25.25 27.70 40-9725M 40-9737M 25 37 53.00 47.04 69.30 63.50 38.96 55.42 3 2 1 DRAWING NO. 40-97XXM REVISIONS ফ᥻ CONTROLLED DOCUMENT 㓪ো 40-97XXM P/N 41.28 ⠜ᴀ Rev OFFICIAL RELEASE

96182

Abstract: 9715 cy7c136
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor

RUBY-9715VG2AR

Abstract: Ethernet Card MTBF processor mtbf pentium 4 775 cpu connector 915GV 82573L 945G IMB-RUBY-9715VG2AR dual display graphics card processor mtbf
Contextual Info: RUBY-9715VG2AR Intel CoreTM 2 Duo processor based ATX Industrial Mainboard with DDR2 SDRAM, VGA, Dual Gigabit Ethernet, Audio and USB ������������������������������ ������������������������

Contextual Info: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters

Contextual Info: 5 4 3 2 Description: D-Sub Hood, Shielded Metal, 15 Pins Part No: 40-9715HM 1 DRAWING NO. 40-9715HM-CUST REVISIONS 01 D OFFICIAL RELEASE 12-19-12 G Z M W M L ECO-12-0335 5e1442f96054ca57b22b000b 5881fb96 2012.12.20 21:07:27 +08'00' D C C B B CUSTOMER COPY

IRf 48 MOSFET

Abstract: IRFH5302TRPBF IRFH5302TR2PBF PQFN footprint AN-1154 IRFH5302TR
Contextual Info: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters

9715

Abstract: JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97153, VERSION 1.1 September, 1997 64K x 18 Synchronous Cache RAM CY7C1031/CY7C1032 Cypress Semiconductor 64K x 18 SRAM, R3 Technology, Fab 4 Devices:CY7C1031/CY7C1032 Package: PLCC QTP# 97153 V1.1 Page 2 of 8

IRFI840G

Abstract: Ultra Low VF GE S 2646 IRGI4060DPBF
Contextual Info: PD - 97153 IRGI4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC = 7.5A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA

RL-9715

Contextual Info: RL-9715 SHIELDED SMD POWER INDUCTOR DESCRIPTION FEATURES & APPLICATIONS • SMD Power Inductor • • • ENVIRONMENTAL DATA • • Storage temperature range: -55°C to +130°C Operating temperature range: -40°C to +130°C Surface mount power inductors in a low profile

IRG7S319

Abstract: IRF530S JESD22-A114 irg7s319upbf IRG7S
Contextual Info: PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

IRLML0100

Abstract: IRLML0030 IRLML0060 IRLML2030 IRLML0100TRPbF IRLML0040 IRLML2060 MARKING EK SOT-23 marking code IRLML2502 IRLML6302 marking
Contextual Info: PD - 97157 IRLML0100TRPbF HEXFET Power MOSFET VDS VGS Max 100 ± 16 V V RDS on max 220 m : 235 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML0100TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits

H2570

Contextual Info: M ITSUBISHI LSIs MH25708TNA-85L,-10L,-12L,-15L/ MH25708TNA-85H,-10H,-12H,-15H i> 2 0 9 7 1 5 2 - B I T 2 6 2 1 4 4 - WORD BY 8-B IT C M O S STATIC RAM MODULE DESCRIPTION The M H 2 5 7 0 8 T N A is a 20 97152-b its C M OS static R A M PIN CONFIGURATION {TOP VIEW)

M22-2030305

Abstract: M22-2030405 M22-2030505 M22-2030605 M22-2030805 M22-2031005 M22-2031205 M22-2032005 M22-2035005 stk 0055
Contextual Info: SIL RIGHT ANGLE HEADER DETAILS Technical Library RS Stk No Manufacturers Part No No of Ways 132-1027 132-1033 131-9709 132-1049 132-1061 131-9715 132-1199 132-1112 132-0721 M22-2030305 M22-2030405 M22-2030505 M22-2030605 M22-2030805 M22-2031005 M22-2031205

IRFI840G

Abstract: Ultra Low VF V30016
Contextual Info: PD - 97154 IRGI4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM