98EC Search Results

8E89

Contextual Info: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ

FG600AH

Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Contextual Info: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC

Contextual Info: EDI4G7332EV 32 Megx72 ECC a High Density DRAM DIMM 32Megx72 High Density DRAM DIMM Features The EDI4G7332EV is an industry standard 168-Pin 8-byte Dual In-Line Memory Module DIMM which is configured as a 32 Meg x 72 for ECC applications. The module is well

EDI88128CS45CB

Abstract: as128Kx8 663D
Contextual Info: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance

3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: EDI4G7332EV 32 Megx72 ECC •High Density DRAM DIMM 32Megx72 High Density DRAM DIMM Features The EDI4G7332EV is an industry standard 168-Pin 8-byte Dual In-Line Memory Module DIMM which is configured as a 32 Meg x 72 for ECC applications. The module is well

ADSP2106XL

Contextual Info: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,

88512

Contextual Info: EU88512VA-RP W 3 X ELECTRONIC DESIGNS, INC 512Kx8Ruggedized PlasticStaticRam 512Kx8Static RAM CMOS, MonoBtht Features EDI's mggedized plastic 512Kx8 SRAM allows the user to 512 Kx8 bit CMO S Static Random Access Memory • Access Times: 15* 17*r 20 and 25ns

Contextual Info: EDI444097Ç-RP W 4Megx4Fast Page DRAM Ruggedized Plastic D I ELECTRONIC. DESIGNS, INC 4 Megabitx 4 Dynamic RAM 5V, Fast Pays Features EDI's ruggedzed plastic 4Mx4 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 4 Meg x 4 bit CMOS Dynamic

Contextual Info: ^EDI EDI7F34IMZ 1Megx32 ELECTRONIC DESIGNS, INC 1Megx32 Flash Module Block Diagrams The EDI7F34IMZ and EDI7F2341MZ are orga­ nized as one and two banks of 1 Meg x 32 respec­ tively. The modules are based on Intel's E28F008SA - 1Megx8 Flash device in TSOP packages which

ba 4918

Abstract: 3198-G 4525 GE
Contextual Info: Philips Components Product specification Very Long Life Low ESR Series 3198 Very Long-Life ComputerGrade Aluminum Electrolytic Capacitors Operating Temperature -55°C to 105°C Specifications Item Perform ance Characteristics Rated Working Voltage 5 ~ 75V

LM1117MD-1.8

Abstract: NSA0298A-12.8 LI-CAM-IMX136-1.8 82C92 LM3670MFX-0.8
Contextual Info: 12345677182749A8BACD 12345677182749E8BACD 12345677182749F8BACD Surface - Mount RGB Color Sensor 123456278 8 ․3456789ABC4DE2F7E82F78792 ․ 2222 31 A!!"!1#"$%2&'F 2 !*DB29+2 31 A!!"!1#"$%2&'F(2 *DB2599D+2

Contextual Info: ^EDI EDI2DL32256V 256Kx32 Synchronous Pipeline Burst SRAM ELECTRONIC DESIGNS, INC TMS320C6x External SBSRAM Features Mem ory Solution The ED I2D L32256VxxB C is a 3.3V, 256Kx32 S ynchro­ DSP Memory Solution • nous Pipeline B urst SRAM constructed with tw o 256K x16

20 NAC 12 I T2

Abstract: Edd 44 EDI4161MEV-RP
Contextual Info: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC. I • 1Megx16 EDO DRAM 1Megabitx 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1Mx16 DRAM allows the user to capitalize on the cost advantage o f using a plastic compo­ 1 Meg x 16 bit CMOS Dynamic

E09A 81aa

Abstract: E896 8a6c E856 E78E 8E89
Contextual Info: 付録 機能一覧 .200 こんなときは.211 エラーメッセージ一覧.214

trc 9500

Contextual Info: EDI8F8513C m o I, ELÉC1R0MC DE9CNS. H C 512KxSStatic Ram 512Kx8StaticRAM CMOS, Module F e a tu r e s The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static

dq52813

Contextual Info: 77 A rV \\ EDI488MEV-RP 8Megx8 D R A M y I ELEiTIÎüNICLEftôtfelNC. ffU ÿ ÿ tt/lÆ i/ PÎ3Sf/C 8Megx8 DRAM Ruggedzed Plastic Features The EDI488MEV-RP is organized as an 8Megx8 bit • 8Meg x 8 Organization Extended Data Out EDO Mode CMOS DRAM. The • CAS-before-RAS Refresh Capability

Contextual Info: ^EDI EDI7C32512C — ELfCTROM C DESGN& INC 512Kx32Flash 512Kx32 Highspeed Flash Module Features The EDI7C32512C is a high speed, high performance, sixteen megabit density Flash module, organized as 512Kx32 bits, containing four 512Kx8 die mounted in a package.