9936 MOSFET Search Results

9936 mosfet

Abstract: G1 8645
Contextual Info: IRF6150 PROVISIONAL Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3.124 2X [.123] S1 S1 3. LET TER DES IGNAT ION: S2 S = SOURCE SK = SOURCE KELVIN G = GAT E IS = CURRENT SENSE

smps 450 W

Abstract: IRFPS43N50K
Contextual Info: PD- 93922 PROVISIONAL IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

014 IR MOSFET Transistor

Abstract: IRFBA32N50K
Contextual Info: PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

IRFBA34N50C

Contextual Info: PD- 93931 PROVISIONAL IRFBA34N50C SMPS MOSFET Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.070Ω 40A 500V Benefits l Low Gate Charge Qg results in Simple

IRFPS60N50C

Contextual Info: PD- 93932 PROVISIONAL IRFPS60N50C SMPS MOSFET Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.038Ω 60A 500V Benefits l Low Gate Charge Qg results in Simple

diode 8645

Abstract: SMPS 30v diode ir 838 IRFBA31N50L offline smps
Contextual Info: PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics

IRF580

Contextual Info: PD- 94044 PROVISIONAL IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF 930

Abstract: IRFPS40N50L 93923 IRFPS40N50
Contextual Info: PD- 93923 PROVISIONAL IRFPS40N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics

IRF6150

Abstract: IR 30 S2
Contextual Info: PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A

Contextual Info: PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9024 -60V 0.28Ω ID -6.4A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

inverter MOSFET 900V 3A

Abstract: IRFAF40
Contextual Info: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAF50

Contextual Info: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF054

Contextual Info: PD - 90640 IRF054 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFF9210

Abstract: 097A
Contextual Info: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90640 IRF054 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90584 IRF044 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF4401

Abstract: IRF440
Contextual Info: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG50

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.