9A MARKING Search Results

SC75

Abstract: S-71201-Rev SIB414DK-T1-E3
Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • TrenchFET Power MOSFET

SC-75

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

SC-75

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

Contextual Info: New Product SiB414DK Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 9a 0.030 at VGS = 2.5 V 9a 0.037 at VGS = 1.8 V 9 a 0.052 at VGS = 1.5 V 9a 0.089 at VGS = 1.2 V 9a • Halogen-free

STD9NM60N

Abstract: STF9NM60N JESD97 STD9NM60N-1 STP9NM60N F9NM60N P9NM60N
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features VDSS @Tjmax Type RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N

IRF630

Abstract: mosfet irf630fp IRF630FP JESD97
Contextual Info: IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS on ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY

SiB412DK

Abstract: SC75 SiB412DK-T1-E3
Contextual Info: New Product SiB412DK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SiB411DK

Abstract: SC75 SiB411DK-T1-E3
Contextual Info: SiB411DK Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V - 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SC-75

Abstract: SiB457EDK-T1-GE3 68A6
Contextual Info: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21

marking BKX

Abstract: SIB455EDK-T1-GE3 SC-75
Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21

Contextual Info: TC4421/TC4422 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load

ZXGD3002E6

Abstract: ZXGD3002 ZETEX GATE DRIVER ZXGD3002E6TA MOSFET 4446 320 sot236 design ideas igbt display plasma marking E1 sot236 TS16949
Contextual Info: ZXGD3002E6 9A peak Gate driver in SOT23-6 General description The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation

TC4422

Abstract: TC4421 TC4422EPA TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422MJA
Contextual Info: M TC4421/TC4422 9A High-Speed MOSFET Drivers Package Type Features • • • • Tough CMOS Construction High Peak Output Current: 9A High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 30nsec with 4,700pF Load - 180nsec with 47,000pF Load

FDS6692A

Contextual Info: FDS6692A N-Channel PowerTrench MOSFET 30V, 9A, 11.5mΩ Features General Description „ RDS ON = 11.5mΩ, VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

ds21420

Contextual Info: TC4421M/TC4422M 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load

12V dc 6A motor driver

Abstract: GTC4421 TC4421 TC4421CAT TC4422 TC4420 equivalent
Contextual Info: TC4421/TC4422 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load

GF19NC60HD

Abstract: JESD97 STGF19NC60HD
Contextual Info: STGF19NC60HD N-channel 600V - 9A - TO-220FP Very fast PowerMESH IGBT General features Type VCES STGF19NC60HD 600V VCE sat IC @100°C (max)@25°C < 2.5V 9A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■

ZXGD3001E6

Abstract: ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER
Contextual Info: ZXGD3001E6 9A peak Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation

Contextual Info: TC4421/TC4422 9A High-Speed MOSFET Drivers Features: General Description: • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Maximum • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load

R6009ENJ

Contextual Info: R6009ENJ Nch 600V 9A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.535W ID 9A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

f10nk50z

Abstract: P10NK50Z STF10NK50Z P10NK50 STP10NK50Z JESD97 p10nk f10nk50
Contextual Info: STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z STF10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■

Contextual Info: R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

JESD97

Contextual Info: STS9NH3LL N-channel 30V - 0.018Ω - 9A - SO-8 Low gate charge STripFET III Power MOSFET General features Type VDSS RDS on ID STS9NH3LL 30V 0.022Ω 9A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced