9X11X1 Search Results

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

MX30UF4G26AB

Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
Contextual Info: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

VFBGA63

Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

PH28F640W18BD60

Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
Contextual Info: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode

SCSP M18

Abstract: PF38F 3098* intel PF38F4050
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

Contextual Info: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.3, DEC. 18, 2013 P/N: PM1113 1 MX30LF1G08AA Contents 1.

28F128L18

Abstract: 28F256L18 28F640L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 PF48F3000 8x10x1 etox 256l18 16x128
Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

Contextual Info: Advanced Information MX30UF1G26 28 AB 1.8V, 1G-bit NAND Flash Memory MX30UF1G26(28)AB P/N: PM2073 REV. 0.00, MAY 09, 2014 1 Advanced Information MX30UF1G26(28)AB Contents 1.

Contextual Info: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 0.02, APR. 02, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.

RD38F4

Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
Contextual Info: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash

PF38F4050

Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

15x1m

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32Mbit spare area

PF48F3000

Abstract: 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18 28F128L18, 28F256L18 Datasheet Product Features „ „ High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

PF38F4060M

Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

WP1F

Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

strataflash 256 x 2 Mbits

Abstract: Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
Contextual Info: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash

Contextual Info: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:

MX30UF1G16

Contextual Info: Advanced Information MX30UF1G16 18 AC 1.8V, 1G-bit NAND Flash Memory MX30UF1G16(18)AC P/N: PM2140 REV. 0.00, JUL. 17, 2014 1 Advanced Information MX30UF1G16(18)AC Contents 1.

MX60LF8G28AB-TI

Contextual Info: Advanced Information MX60LF8G28AB 3V, 8G-bit NAND Flash Memory MX60LF8G28AB P/N: PM2074 REV. 0.01, JUN. 03, 2014 1 Advanced Information MX60LF8G28AB Contents 1.

Contextual Info: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.4, FEB. 27, 2014 P/N: PM1113 1 MX30LF1G08AA Contents 1.

Contextual Info: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 1.1, JUN. 23, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.