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    AGR21090E Search Results

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    AGR21090E Price and Stock

    Advanced Semiconductor Inc AGR21090EF

    RF MOSFET Transistors 2.11-2.17GHz 19Watt Gain 14.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR21090EF
    • 1 $76.43
    • 10 $64.96
    • 100 $60.39
    • 1000 $60.39
    • 10000 $60.39
    		Get Quote

    AGR21090E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21090E TriQuint Semiconductor 90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21090EF Agere Systems 90 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21090E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)

    J299

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299

    AGR21090E

    Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
    Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz

    AGR21090

    Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
    Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF DS04-165RFPP DS04-059RFPP) AGR21090 mosfet j460 AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS02-276RFPP

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM