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    Kyocera AVX Components 100B6R8JT500XT1K

    CAP CER 6.8PF 500V P90 1111
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    Kyocera AVX Components 100B6R8BT500XT1K

    CAP CER 6.8PF 500V P90 1111
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    Kyocera AVX Components 100B6R8CT500XT1K

    CAP CER 6.8PF 500V P90 1111
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    Kyocera AVX Components 100B6R8CW500XT1K

    CAP CER 6.8PF 500V P90 1111
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    TE Connectivity TE100B6R8J

    RES CHAS MNT 6.8 OHM 5% 100W
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    100B6R8 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B6R8BT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8BT500XT1K American Technical Ceramics Ceramic Capacitor 6.8PF 500V P90 1111 Original PDF
    100B6R8BTN500X American Technical Ceramics 6.8PF 500V CAP CER SMD Original PDF
    100B6R8BTN500XC100 American Technical Ceramics 6.8PF 500V CAP CER SMD Original PDF
    100B6R8BW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8BW500XT1K American Technical Ceramics Ceramic Capacitor 6.8PF 500V P90 1111 Original PDF
    100B6R8CT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8CT500XT1K American Technical Ceramics Ceramic Capacitor 6.8PF 500V P90 1111 Original PDF
    100B6R8CW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8CW500XT1K American Technical Ceramics Ceramic Capacitor 6.8PF 500V P90 1111 Original PDF
    100B6R8JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 6.8PF 500V P90 1111 Original PDF
    100B6R8JT500XT1K American Technical Ceramics Ceramic Capacitor 6.8PF 500V P90 1111 Original PDF

    100B6R8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3

    Untitled

    Abstract: No abstract text available
    Text: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100H 37ficers, MRF6S19100HR3 MRF6S19100HSR3

    100B0R5BW

    Abstract: MW4IC2020NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage


    Original     		PDF MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 MRF6P21190HR6

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6

    MRF5S21130H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    MRF6S21140HSR3

    Abstract: J932
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140HR3 MRF6S21140HSR3 J932