AP02002 Search Results
AP02002 Price and Stock
Teledyne Lecroy AP020-021-2GROUND BAYONET AP020/021 |
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AP020-021-2 | Bag | 1 |
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Teledyne Lecroy AP020-021-1BNC ADAPTER FOR AP020/021 |
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AP020-021-1 | Bag | 1 |
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AP02002 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AA112A
Abstract: IPC-7351A
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AP02002) AP02001) IPC-7351A) DFN0402â DFN0603â DFN0606â IPC-7351A, AA112A IPC-7351A | |
BC817Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound |
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BC817-16W/-25W/-40W BC807-xxW OT323 AEC-Q101 J-STD-020 MIL-STD-202, DS30575 BC817 | |
K1 transistorContextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound. |
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FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor | |
Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 |
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MMDT2907A OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30109 | |
Contextual Info: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection |
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BAS70/ AEC-Q101 J-STD-020D MIL-STD-202, DS11007 | |
AL8400
Abstract: AL8400QSE-7 sot353 marking AE mosfet marking code AE
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AL8400 /AL8400Q 200mV AL8400/ AL8400Q DS35115 AL8400QSE-7 sot353 marking AE mosfet marking code AE | |
sot23 mark code e2
Abstract: SOT23 component marking code KA MARK H1 SOT89 SOT23 MARK Y3 sot89 making b5 SOT23 component marking code B6 mark y2 sot23 Y2 sot23 mark
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AP432/AP432A AP432 AP432A DS31003 sot23 mark code e2 SOT23 component marking code KA MARK H1 SOT89 SOT23 MARK Y3 sot89 making b5 SOT23 component marking code B6 mark y2 sot23 Y2 sot23 mark | |
Contextual Info: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management |
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DMP1080UCB4 AEC-Q101 U-WLB1010-4 DS35827 | |
MARKING 851
Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
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ZXTN2010Z ZXTP2012Z AEC-Q101 J-STD-020 ZXTN2010Z DS33661 MARKING 851 SOT89 MARKING CODE 5A SOT89 transistor marking 851 | |
e 102m 3kVContextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management |
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DMP1096UCB4 AEC-Q101 U-WLB1010-4 DS31954 e 102m 3kV | |
ZXTP2014G
Abstract: ZXTP2014
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ZXTP2014G OT223 -140V -120mV AEC-Q101 OT223 J-STD-020 ZXTP2014G DS33716 ZXTP2014 | |
IN 1004 diodesContextual Info: Pb GBU10005 - GBU1010 10A GLASS PASSIVATED BRIDGE RECTIFIER Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 220A Peak |
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GBU10005 GBU1010 1500VRMS E94661 J-STD-020 DS30052 IN 1004 diodes | |
fzt591aContextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A |
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FZT591A OT223 -500mV FZT591A AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33143 | |
Contextual Info: BAS521 HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: max. 50 ns High Reverse Breakdown Voltage: 300V Low Leakage Current: 100nA at room temperature Ultra Small Plastic SMD Package Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2 |
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BAS521 100nA OD-523 J-STD-020 MIL-STD-202, OD523 DS32175 | |
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zp2 TRANSISTORContextual Info: DSS5240T Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -40V IC = -2A high Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage -225mV Max @ IC = -1A. RCE sat = 90mΩ at 0.5A for a low equivalent on-resistance |
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DSS5240T -225mV 730mW DSS4240T AEC-Q101 J-STD-020 MIL-STD-202, DS31591 zp2 TRANSISTOR | |
74AUP1G86SEContextual Info: 74AUP1G86 SINGLE 2 INPUT EXCLUSIVE-OR GATE Description Pin Assignments The Advanced Ultra Low Power AUP CMOS logic family is designed for low power and extended battery life in portable applications. The 74AUP1G86 is a single 2-input positive exclusive-OR gate with a |
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74AUP1G86 74AUP1G86 DS35156 74AUP1G86SE | |
marking 624Contextual Info: A Product Line of Diodes Incorporated FMMT624 125V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 125V IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current RCE sat = 160mΩ for a low equivalent On-Resistance |
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FMMT624 625mW AEC-Q101 J-STD-020 MIL-STD-202, DS33110 marking 624 | |
Contextual Info: B220/A - B260/A Green 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • • Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency |
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B220/A B260/A AEC-Q101 J-STD-020 DS13004 | |
PowerDI-123
Abstract: DIODES MARKING FAG
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DFLT170A 1000s AEC-Q101 POWERDI123 J-STD-020 DS30581 PowerDI-123 DIODES MARKING FAG | |
Contextual Info: AP7363 1.5A LOW QUIESCENT CURRENT, FAST TRANSIENT ULTRA-LOW DROPOUT LINEAR REGULATOR Description Pin Assignments The AP7363 is a 1.5A adjustable output voltage linear regulator with Top View ultra-low dropout. The device includes pass element, error amplifier, |
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AP7363 AP7363 U-DFN2030-8, OT223 DS35059 | |
74AUP1G07SE-7
Abstract: 74AUP1G07
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74AUP1G07 74AUP1G07 DS35149 74AUP1G07SE-7 | |
Contextual Info: DST3946DPJ COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Ultra Small Package Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2 |
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DST3946DPJ OT963 J-STD-020 MIL-STD-202, OT963 DST3946DPJ-nd DS32040 | |
Contextual Info: DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max -30V 32mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V • • • • • • ID TA = 25°C -6.8A -5.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMP3028LFDE AEC-Q101 U-DFN2020-6 DS35965 | |
Contextual Info: BAV70W Green DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 4ns Low Capacitance: Maximum of 2.0pF Small Surface Mount Package For General Purpose Switching Applications Lead-Free Finish; RoHS Compliant Notes 1 & 2 |
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BAV70W AEC-Q101 OT323 J-STD-020 MIL-STD-202, DS30063 |