BCW60C Search Results

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D CD1IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW 60A = AA BCW60B = AB BCW 60C = AC P A C K A G E O U T L IN E D E T A IL S BCVV60D —AD A L L D IM EN SIO N S IN m m J3.0 2 . 8~ 0.1 4 0.48 0.38

Contextual Info: S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW 60 PARTMARKING DETAILS:BCW60A - AA BCW60AR - CR BCW60B - AB BCW60BR - DR BCW60C - AC BCW60CR - AR BCW60D - AD BCW60DR - BR ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT C ollector-B ase V oltag e

Contextual Info: BCW60C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW60C SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.1 A ICM: Collector-base voltage 32 V

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC

"Marking AC"

Abstract: BCW60C
Contextual Info: BCW60C SOT-23 Plastic-Encapsulate Transistors BCW60C SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.1 A Collector-base voltage 32 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: CDU BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC BCW60D = AD PACKAG E O UTLIN E DETAILS ALL DIM EN SION S IN mm _3.0 2.8" 0.14 0.48 0.38 3 2.6 Pin configuration 2.4

Contextual Info: BCW60CL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BCW60A BCW60B BCW60C BCW60D IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN m m 0 .14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BCW60D

Abstract: BC860A
Contextual Info: SOT23 OTHER SM ALL SIG N A L DEVICES OFFERED LISTING ONLY GENERAL PURPOSE TRAN SISTO RS TYPE NPN BC846A BC846B BCV71 BCV72 FMMT2484 BC850B BC850C BC847A BC847B BC847C BCW71 BCW72 BCX70G BCX70H BCX70J BCX70K FMMTA20 BCW60A BCW60B BCW60C BCW60D BC848A BC848B

BCV71

Abstract: BCV72 BCX70G FMMT3903 FMMT3904 FMMT3905 FMMT3906 BCW61D 215
Contextual Info: SOT-23 TRANSISTORS NPN GENERAL PURPOSE RATINGS A N D CHARACTERISTICS at 25°C ambient temperature. Type BCV71 BCV72 FM MT3903 FMMT3904 BCW 71/71R BCW 72/72R BCX70G BCX70H BCX70J BGX70K BCW 60A BCW60B BCW60C BCW 60D BCW 31/31R BCW 32/32R BCW 33/33R FM M T-A 20

IC 8002

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC NPN GENERAL PURPOSE NPN RATINGS DEVICE BC818-16 BC818-25 BC818-40 BC846A BC846B BC846W BC847A BC847B BC847C BC848A BC848B BC848C BCV71 BCV72 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C hFE VCE SAT fT VCEO IC min/max@IC/VCEO

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors

Contextual Info: BCW60CR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BCW71 AG

Contextual Info: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arkin g BCW 60A = AA BCW 60B '= AB BCW 60C = AC BCW 60D = AD P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.o_ 2.8 0.48 0.38 0.14 3 2.6

Contextual Info: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N Silicon transistors Marking BCW6QA = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.1 + Pin configuration 1 = B ASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BCW60C TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: 0.1 A Collector-base voltage

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C