BCW66F Search Results

BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

003A MARKING TRANSISTOR

Abstract: BCW66F BCW66G BCW66H
Contextual Info: MOTOROLA SC { DIODES/OPTO} 6367255 MOTOROLA SC 34 » F | b 3 b 7 a S S D03Ô5SS 2 DIODES/OPTO 34C 3 8 2 55 D SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP v ie w c I I • *— ' - in B Device nr E Designed for low-frequency driver stage and switching

bcw66

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

bcw66h

Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: BCW66F Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)700m @I(C) (A) (Test Condition)500m

BCW66F/66G/66H

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW66F/66G/66H 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.8

max7575

Abstract: BCW66F BCW66G BCW66H
Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

ic 556

Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

100MHZ

Abstract: BCW66F
Contextual Info: RECTRON BCW66F SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration

egs SOT23

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B

BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCW66H

Abstract: BCW66F BCW66G
Contextual Info: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50

Contextual Info: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW66F/66G/66H TRANSISTOR NPN 1. BASE FEATURES Complementary to BCW68 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

bcw66fr

Contextual Info: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68

IC 556

Abstract: ic 556 specifications marking cd 556 BCW66F BCW66G BCW66H
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF

BCW66H

Abstract: marking eh sot23 bcw66g SAL1 BCW66F
Contextual Info: MOTOROLA SC - C D IO DE S/O PT OJ 6367255 MOTOROLA SC 34 DF|b3b72SS DIODES/OPTO 34C 0030255 38255 D SOT23 (continued) BCW66F,G,H d e v ic e no. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW ur B D evice C | • D e s ig n e d fo r lo w -fre q u en cy d rive r sta g e a n d sw itching

Contextual Info: BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1- ° 2_ "

Contextual Info: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION