BCW68F Search Results

marking 68g

Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

Contextual Info: 34 M O T O R O L A SC i D I O D E S / O P T O l 6 3 6 7 2 5 5 MOTOROLA SC ÖF^LBb7aSS DI ODES/ OPTO 34C DDBöaS? t 38257 D SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching

marking 68g

Abstract: BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H SA series transistor
Contextual Info: BCW67, A, B, C BCW68, F, G, H CDfll GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.09 3 Pin configuration

BCW68H

Contextual Info: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68F/68G/68H TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Complementary to BCW66 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

BCW68GR

Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCW68

Abstract: BCW68G Plastic-Encapsulate Transistors BCW68H BCW66 BCW68F
Contextual Info: BCW68 PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES  L 3 Complementary to BCW66. 3 C B Top View COLLECTOR 1 3 1 K 2 E 2 D 1 MARKING: F BASE BCW68F:DF

BCW Smd transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transisto r Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

BCW68F

Contextual Info: BCW68F . BCW68H BCW68F . BCW68H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

68G MARKING

Contextual Info: BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 67A DA BCW 67B DB BCW 67C DC BCW68F DF BCW 68G DG BCW 68H DH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

BC557AP

Abstract: BC327-5 BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BCW68 BCW68F BCX76 BC486A BC486L18 BC486L5 BCS60A BC557VI BC557VI BCW69 BC307 BC307-18 BC307-5 BC307A BC307A18 BC307A5 BC557AP

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm BCW67A = DA BCW67B = DB BCW67C » DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BCW66F

Abstract: BCW66H BCW68F BCW68G BCW68H
Contextual Info: BCW68F . BCW68H BCW68F . BCW68H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

BCW88H

Abstract: BCW67CR BCW67 BCW67A BCW67AR BCW67B BCW67BR BCW67C BCW68F BCW68FR
Contextual Info: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCW67

Abstract: BCW58 BCW57 BCW57B BCW67BR BCW65 BCW66 BCW67A BCW68 BCW68HR-7N
Contextual Info: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTM ARKING D ETA ILSBCW 67A- DA BC W 67B- DB BCW 67C- DC BCW 68F- DF BCW 68G - DG BCW 68H - DH BCW67AR BCW67BR BCW67CR BCW68FR BCW68GR BCW68HR -

ic 556

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking PACKAGE OUTLINE DETAILS A LL DIM ENSIO NS IN mm BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 f I i 3 I Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68F/68G/68H 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 2. 4 1. 3 W(Tamb=25℃) 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage V

100MHZ

Abstract: BCW68F
Contextual Info: RECTRON BCW68F SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : -0.8 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range

BCW67B Motorola

Abstract: 68g diode BCW67B marking 68g BCW65 BCW66 BCW67 BCW67A BCW67C BCW68
Contextual Info: MOTOROLA 34 SC i D I O D E S / O P T O * 6367255 MOTOROLA SC DiT|b3b7aSS D IO D E S /O P T O 34C D D B ö a S ? L. 38257 SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching

Diode ST48

Abstract: transistor bsw 42 ssb demodulator ic SIEMENS BFP405 DECT siemens RF AC-RX BSW filter BSW 32 AD6411 AD6411AST
Contextual Info: a FEATURES Fully Compliant with DECT Specifications Single IC DECT Radio Integrated UHF VCO External Resonator Integrated Synthesizer Supporting Extended Frequency Allocation Built-In Supply Regulation Direct VCO Modulation for DECT Transmit Path PLL-Based Demodulator

BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse