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    Plessey Semiconductors Ltd BCY79BBS

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    Quest Components BCY79BBS 1,496
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    Signetics BCY79B

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    Quest Components BCY79B 8
    • 1 $35.5424
    • 10 $33.7653
    • 100 $33.7653
    • 1000 $33.7653
    • 10000 $33.7653
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    BCY79B Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCY79B Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=45 / Ic=0.2 / Hfe=180-310 / fT(Hz)=180M / Pwr(W)=0.39 Original PDF
    BCY79B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY79B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY79B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY79B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY79B Unknown Shortform Electronic Component Datasheets Short Form PDF
    BCY79B Semelab General Purpose Transistors Scan PDF
    BCY79B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BCY79BP Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY79BP Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BCY79B Datasheets Context Search

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    BCY79B

    Abstract: No abstract text available
    Text: BCY79B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BCY79B O206AA) 1/10m 19-Jun-02 BCY79B

    Untitled

    Abstract: No abstract text available
    Text: BCY79B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BCY79B O206AA) 1/10m 16-Jul-02

    BC560AP

    Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C


    Original     		PDF BCY79A A5T3504 2N4452 BCl77-6 BCY79B BC560AP 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614

    BCY79B

    Abstract: No abstract text available
    Text: BCY79B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BCY79B O206AA) 1/10m 2-Aug-02 BCY79B

    180M 290

    Abstract: BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 BC307B5 JE9015C JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 ~g~jgR 15 20 BCF70R BCB57B BC177P BC177PK BC307P BC307PK BC307PL BC560B ~~~7AR 25 30 1T130A KSA539 KSA707 2SA564A BCB60AR BCB60AR BCB60AR


    Original     		PDF BC307B5 JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 180M 290 BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    BCY79C

    Abstract: BCY79B
    Text: BCY79 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, PNP TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN


    Original     		PDF BCY79 O-206AA) -10mA -100mA -10mA, -100mA -10mA BCY79C BCY79B

    BC307A

    Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
    Text: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C


    OCR Scan     		PDF BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC558B BC308B BC557A

    transistor ZTX302

    Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE


    OCR Scan     		PDF ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 BC558B BC558C transistor ZTX302 ZTX502 transistor ztx304 BFS98 ZTX109 transistor MPSA06 transistor ZTX108 BC556P

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    ZTX504

    Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
    Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220


    OCR Scan     		PDF BC556A BC556B ZTX504 BCY77A BCY77B BCY77C BC212 BC307 BC557A ZTX502 BC557B BC557C

    bc461

    Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
    Text: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42


    OCR Scan     		PDF 0DGQ447 BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 bc461 BCY39A BCY87 T071 BCY89 BCY70 BS BCY34A BCY56

    BC557P

    Abstract: ZTX501 BC212P ZTX504 ZTX108 ZTX502 BC177P BC182P BC546P BC547P
    Text: TAB LE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed fo r small signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE


    OCR Scan     		PDF BC556P BC546P ZTX504 ZTX304 ZTX212 ZTX107 BC212P BC182P BC557P BC547P ZTX501 ZTX108 ZTX502 BC177P BC182P BC546P BC547P

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    bc558c

    Abstract: BC212
    Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t


    OCR Scan     		PDF BC556A BC556B ZTX504 BCY77A BCY77B BCY77C BC212 BC307 BC557A BC557B bc558c

    TRANSISTOR BC140

    Abstract: applications of Transistor BC108 BC558C bc140 TRANSISTOR BC308B 2N2102 2N2605 2N4036 BC141 BC161
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZT211 BC558B BC558C BC559B BC559C BCY72 BC308A BC308B BC308C BC309B TRANSISTOR BC140 applications of Transistor BC108 bc140 TRANSISTOR 2N2102 2N2605 2N4036 BC141 BC161

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367