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    BDT95 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT95 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT95 Magnatec Silicon Epitaxial Base Power Transistors Scan PDF
    BDT95 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT95 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT95 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT95 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT95 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT95 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT95 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT95 Unknown Transistor Replacements Scan PDF
    BDT95 Philips Semiconductors SILICON EPITAXIAL BASE POWER TRANSISTORS Scan PDF
    BDT95F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BDT95F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT95F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT95F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BDT95 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT93

    Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96


    Original     		PDF BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200

    2u 62 diode

    Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20


    Original     		PDF SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    044H11

    Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S


    Original     		PDF 044H10 KSP1152 KSP1172 OT7A09 OT7S09 2N3714 B0245B 044H11 KT808B kt808BM BJG 36 kt808 2s021 B0313 2n1810

    KT808AM

    Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4


    Original     		PDF O-247 OT-186 O-111 T0-61 KT808AM 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C

    BDT95F

    Abstract: BDT91F BDT92F BDT93F BDT96F
    Text: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .


    OCR Scan     		PDF BDT91F; BDT93F BDT95F 711DflSb D04333D BDT92F, BDT94Fand BDT96F. BDT91F OT186. BDT95F BDT92F BDT96F

    BDT94

    Abstract: BDT96 BDT93 SOT92 BDT91 BDT92 BDT95 IEC134
    Text: BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95. Q UICK REFERENCE D A T A


    OCR Scan     		PDF BDT92 BDT94 BDT96 BDT91, BDT93 BDT95. BDT94 D03M7AB BDT96 SOT92 BDT91 BDT92 BDT95 IEC134

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.

    BDT93

    Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT91 BDT93 711002b BDT95 BDT92 BDT96 3313

    BDT91F

    Abstract: BDT92F BDT94F BDT95F BDT96F BDT96
    Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. bdt92f DO3470S BDT91F BDT95F BDT96F BDT96

    bdt95a

    Abstract: BDT96 BDT93 BDT91 BDT92 BDT94 BDT95
    Text: \ M A G IN IA TEC BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P com plem ents are BDT92, BDT94 and BDT96.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 bdt95a BDT96 BDT91 BDT92 BDT95

    BDT95

    Abstract: No abstract text available
    Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. DBDT93 BDT95

    Untitled

    Abstract: No abstract text available
    Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOTl86 BDT91F, BDT93Fand BDT95F. BDT92F

    BDT95

    Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94
    Text: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 Q3477M BDT95 BOT93 BDT96 BOT95 BDT91 BDT92

    T-33-O

    Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341
    Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F 711002b DQ4334G T-33-O inaSOT186 BDT91F, BDT93Fand BDT95F. T-33-O BDT91F BDT92F BDT95F BDT96F 043341

    BDT95

    Abstract: bdt93
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT91 BDT93 BDT95 711002t, 711005b 0QM33E7 BDT95

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F 003477b

    BDT91F

    Abstract: BDT92F BDT93F BDT95F BDT96F
    Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F

    2009-6F

    Abstract: No abstract text available
    Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. BDT92F 711Qfl5b T-33-09 2009-6F

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BDT95

    Abstract: BDT96 BDT91 1346P pht 094 BDT93
    Text: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and


    OCR Scan     		PDF 05-DEC-1997 BDT91 BDT93 BDT95 8DT92, 8DT94 BDT96. BDT93 BDT95 BDT96 BDT91 1346P pht 094

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350