7110FL2LI Search Results

BFQ291

Abstract: BFQ290
Contextual Info: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product

BFS21

Abstract: BFS21A SOT52 PHILIPS 1980
Contextual Info: Il PHILIPS INTERNATIONAL 41E D • . 7110fl2Li Q05bE3cl ô HiPHIN MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channei silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.

BDT93

Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
Contextual Info: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.

BD827

Abstract: BD830 bd829 BD825 BD826 BD828 IEC134
Contextual Info: BD825 BD827 BD829 PHILIPS INTERNATIONAL SbE D 7110fl2Li G043Q12 HIPHIN SILICON PLANAR EPITAXIAL POW ER TRANSISTO RS General purpose N-P-N transistors, in T 0 -2 0 2 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits.

TG 56369

Abstract: fast diod 5A Ultra Fast Recovery Double Rectifier Diodes BYV32 IEC134 RECTIFIER DIODES PHILIPS 20/TG 56369
Contextual Info: BYV32 SERIES PHILIPS INTERNATIONAL SLE D • 7110a2b Q0413Sfl C 7T ■ P H I N T - ¿ > 3 - 1 ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. T hey are intended for

NE5560N

Abstract: NE5560 Ferroxcube 3C8 se5560 NES560D 6 pin smps power control ic core 3c8 sawtooth generator SE5560F NE5560D
Contextual Info: P hilips Sem iconductors Linear P roducts P roduct sp ecifica tio n Switched-mode power supply control circuit NE/SE5560 PIN CONFIGURATION DESCRIPTION The NE/SE5560 is a control circuit for use in switched-mode power supplies. This single monolithic chip incorporates all the control and

CI SG3524

Abstract: SG3524 pwm INVERTER SG3524S CI SG3524 current limiting 8 dip smps circuits smps control sg3524 smps
Contextual Info: Philips Semiconductors Linear Products Product specification SMPS control circuit SG3524 DESCRIPTION PIN CONFIGURATION This monolithic integrated circuit contains all the control circuitry for a regulating power supply inverter or switching regulator. Included in

BAX14

Abstract: general purpose diode
Contextual Info: Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX14 is a general purpose switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27

Rtz qe

Abstract: bt dp01 84C440 PWM32 PWM42 84C640 84C844 op07 oscillator PCA84C641 84C443
Contextual Info: Philips Semiconductors Product specification 8-bit microcontrollers with O S D and V S T o a i ^ a a w o ^ o v iv 84C 44X ; 84C 64X; 84C 84X 1 . FEATURES 2. GENERAL DESCRIPTION 1.1 84CXXX kernel The 84C440, 84C441, 84C443, 84C444, 84C640, 84C 641, 84C643, 84C644, 84C840, 84C 841, 84C843

transistor t07

Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures

transistor smd LC 77

Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

SDIP32

Abstract: TEA0678 TEA0678T
Contextual Info: FEATURES GENERAL DESCRIPTION • Dual noise reduction NR channels • Head pre-amplifiers • Reverse head switching • Automatic Music Search (AMS) • Mute position • Equalization with electronically switched time constants • Dolby reference level = 387.5 mV

Contextual Info: Philips Semiconductors Linear Products Product specification EIA-232-D/V.28 driver/receiver MC145406 DESCRIPTION PIN CONFIGURATION The MC145406 is a silicon-gate CMOS 1C that combines 3 drivers and 3 receivers to fulfill the electrical specifications of standards

DL 711 PHILIPS

Abstract: BY206 BLW34 BZY88-C3V3 BZY88C3V3 philips dl 711 cc cv2 100 170 mml 600 TRANSISTOR BLW34 preset potentiometer
Contextual Info: bSE T> 711DÖ2b 0Db35S3 35T • PHIN BLW34 P H ILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. am plifiers fo r television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation

CDA 10.7 MC 40

Abstract: dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712
Contextual Info: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM

Contextual Info: Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD 8OC SMD packages. The series consists of 43 types with nominal working

16 QAM receiver block diagram

Abstract: amplifier equalizer mixer connection diagram receiver QAM schematic diagram digital clock and carrier recovery 32 QAM BER SER 32QAM modulation TDA8045H 64 QAM diagram 16 qam demodulator carrier recovery
Contextual Info: Preliminary specification Philips Semiconductors QAM demodulator TDA8045 FEATURES • Different modulation schemes: 4, 16, 32 and 64-QAM • Digital demodulator and Square-Root Raised-Cosine Nyquist filter with roll-off of 20% • High performance adaptive equalizer no training

C-BUS Microcontroller Interface

Abstract: 940622 07 DC SERVO MOTOR CONTROL circuit metal detector diagram PI QFP64 SAA7345 SAA7374 TDA1301 TDA1301T IEC958
Contextual Info: Philips Semiconductors Preliminary specifications Low voltage digital servo processor and Compact Disc decoder CD7LV CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION

BF1100

Abstract: BF1100R 71hwfc dual-gate
Contextual Info: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

UHF amplifier module

Abstract: power BJT gp bjt BGY205
Contextual Info: Philips Semiconductors Objective specification UHF amplifier module BGY205 FEATURES DESCRIPTION • Single 6 V nominal supply voltage The BGY205 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

54ABT245

Abstract: 54ABT374 54ABT646 diode a3u
Contextual Info: Product specification Philips Semiconductors Military Advanced BiCMOS Products Octal bus transceiver/register 3-State 54ABT646 DESCRIPTION FEATURES The 54ABT646 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high

TDA85610

Abstract: tda8561q diagram car amplifier circuit diagram TDA8561Q 200 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM 2D70 car power amplifier tda8561q
Contextual Info: Philips Semiconductors Preliminary specification 2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier TnAft^Rin UASbbl U FEATURES • Reverse polarity safe • Requires very few external components • Electrostatic discharge protection • High output power

Diode T2D od

Abstract: mab8400 MAB8048 PC10 PC11 PCD33XXA
Contextual Info: Philips Semiconductors Product specification 8-bit telecom microcontrollers PCD33XXA Family CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3

rbs 6102

Abstract: rbs 6101 telecom rbs 6102 MAB8048 MAB8400 PC10 PC11 philips capacitors FE AMA schematic diagram cpl inverter rbs 6101 description
Contextual Info: Product specification Philips Semiconductors PCD33xxA Family 8-bit telecom microcontrollers CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3