BFG67 Search Results

BFG67

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

9632 transistor

Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
Contextual Info: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.

BFG67

Contextual Info: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4

marking V3

Contextual Info: BFG67 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • Small feedback capacitance • Low noise figure • High transition frequency 4 3 Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

marking v3

Contextual Info: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4

BF 212 transistor

Abstract: BFG67W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

BFG67R

Abstract: "Transistor 1 GHz" BFG67 MBB307 sot143r transistor
Contextual Info: Philips Semiconductors Product specification BFG67; BFG67/X; BFG67R; BFG67/XR NPN 8 GHz wideband transistor PINNING FEATURES • High power gain PIN DESCRIPTION • Low noise figure BFG67 Fig.1 Code: V3. • High transition frequency 1 collector • Gold metallization ensures

BFG67

Abstract: 2 GHz ic marking v3
Contextual Info: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave

Contextual Info: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

bfg67

Contextual Info: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors

so 54 t

Abstract: BF547B BF751 T143R BFG65
Contextual Info: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A

Contextual Info: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave

Contextual Info: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave

BFQ65

Abstract: BFQ67 X3A-BFQ65 BFG67
Contextual Info: P h ilip s Sem icon d u ctors Produ ct specification -T=3i-so NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE D X3A-BFQ65 • 71106Sfc. QOHbCHb S'lb « P H I N M E C H A N IC A L DATA DESCRIPTION NPN crystal used in BFQ 65 SOT37 , BFG67 (SOT143)

BT 1840 PA

Contextual Info: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure

TAG 9109

Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
Contextual Info: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure

BFG67

Abstract: Y parameters of transistors transistor marking v12 ghz db 97-0310
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PINNING FEATURES • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability.

BFG67

Abstract: feature of ic UM 66 transistor GR 338
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES BFG67; BFG67/X; BFG67/XR

STR M 6559

Abstract: 9632 transistor str 6559 4609 IC equivalent BFG67W STR 5564
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

Contextual Info: Not for new design, this product will be obsoleted soon BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFG67/XR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)5

silicon npn planar rf transistor sot 143

Abstract: BFG67 2 GHz ic
Contextual Info: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave

BFQ65

Abstract: BFG67 BFQ67 X3A-BFQ65 to4 TRANSISTOR
Contextual Info: ^ □53^31 0G32S0b TÔ4 Philips Semiconductors • APY Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b^E D MECHANICAL DATA NPN crystal used in BFQ65 (SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole