L33 TRANSISTOR
Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W
Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF
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BF747W
711DflEb
DD44170
OT323
BF747W
BF747.
UBC370
OT323.
L33 TRANSISTOR
transistor L33
npn l33
l33 sot23
l33 thermal
UBC370
transistor KIN
BF747
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Untitled
Abstract: No abstract text available
Text: Phlllp^emlconductors M b b 5 3 T 31 DOS l O f l l TOb M APX Preliminary specification NPN 1 GHz wideband transistor BF747W N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It Is primarily intended as a mixer,
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BF747W
OT323
BF747W
BF747.
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so 54 t
Abstract: BF547B BF751 T143R BFG65
Text: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A
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BF547
F547W
BF689K
BF747
BF747W
BF748
BF751
BF763
BFG31
BFG33/X
so 54 t
BF547B
T143R
BFG65
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Untitled
Abstract: No abstract text available
Text: / s 3 i~ /^7 NPN 1 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION SbE D • BF747W 711DflSb G D 4 4 T 7 0 b33 M P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF
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BF747W
711DflSb
OT323
BF747W
BF747.
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BF747
Abstract: BF747W
Text: P M Ii^ S e n ^ c o n d u c t o r e _ M bb53T31 D03]infll ^Qb M APX Preliminary specification NPN 1 GHz wideband transistor BF747W N AMER PHILIPS/DISCRETE D E S C R IP T IO N b'îE D PIN N IN G Silicon N P N transistor in a plastic S O T 3 2 3 S-minl envelope. It is
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bb53T31
BF747W
OT323
BF747W
BF747.
BF747
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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OT122
OT143
OT223
OT323
BFS17W
BFG17A
BFG16A
BF547W
BF747W
BFT25
BFG591 amplifier
SC08a
bfr591
sot173x
BB544
sot122
sot172
bfg65 sot143
SIEMENS BFP520
macro-X ceramic
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BST60
Abstract: No abstract text available
Text: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60
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BSP60
BST60
BSP61
BST61
BSP62
BST62
OT-223
OT-89
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