BFQ67 Search Results

sot23 marking V2p

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION

transistor MAR 825

Abstract: mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65
Contextual Info: Tem ic BFQ67 S e m U o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low-noise. small-signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain

Contextual Info: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

Contextual Info: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability

transistor bt 808

Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2

LB 1639 1 L0

Abstract: Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068
Contextual Info: ok ,i . Philips Sem iconductors • bb53T31 D025DB4 36b « A P X AflER P H I L I P S / D I S C R E T E Product specification b?E D NPN 8 GHz wideband transistor FEATURES • BFQ67W PIN CONFIGURATION PINNING PIN High power gain DESCRIPTION • Low noise figure

transistor t07

Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures

smd transistor marking ZS

Abstract: BFQ67F ic MA 2831
Contextual Info: BFQ67F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFQ67W

Abstract: 15.931 BFQ67 BFQ67R transistor marking WV2
Contextual Info: BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

transistor MAR 825

Abstract: transistor MAR 819 MAR 641 TRANSISTOR
Contextual Info: Temic BFQ67 Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

kl SN 102 94-0

Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Contextual Info: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

Contextual Info: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole

MSB003

Abstract: sot23 marking V2p BFQ67
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION • High power gain Silicon NPN wideband transistor in a plastic SOT23 package. • Low noise figure 3 • High transition frequency • Gold metallization ensures

MARKING SMD npn TRANSISTOR 690

Abstract: smd transistor E3 BFQ6 transistor smd .PB v1
Contextual Info: BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFQ67

Abstract: temic 0675
Contextual Info: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

MARKING SMD npn TRANSISTOR 690

Abstract: vishay rf output power transistor
Contextual Info: Not for new design, this product will be obsoleted soon BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFQ67W

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING • High power gain PIN  Low noise figure DESCRIPTION Code: V2

transistor MAR 825

Abstract: MAR 641 TRANSISTOR transistor MAR 543 MAR 618 transistor BFQ67 temic 0675 transistor MAR 819 marking v2 sot 1301
Contextual Info: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

BFQ67W

Abstract: MRC043 mrc047 MRC039
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING • High power gain PIN  Low noise figure DESCRIPTION

transistor s11 s12 s21 s22

Abstract: MRC039
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 8 GHz wideband transistor BFQ67T PINNING FEATURES • High power gain PIN • Low noise figure

4000 npn

Abstract: 122e
Contextual Info: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 27 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION

smd transistor marking zs

Abstract: BFQ67F MARKING SMD npn TRANSISTOR 690
Contextual Info: BFQ67F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFQ67

Abstract: transistor ZO 103 MA MSB003 RF TRANSISTOR 2.5 GHZ s parameter MRA610 transistor DATA REFERENCE handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ67 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain