BFR93AW Search Results

transistor marking R2s

Abstract: BFR93AW marking R2s poon BCR108W
Contextual Info: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR93AW Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)15 I(C) Max. (A)35m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.

BFR93AW

Abstract: B 1359 marking A3 amplifier 449
Contextual Info: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2

MARKING WR2 SOT-23

Abstract: ZS 633
Contextual Info: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BFR93AW

Abstract: MBG204 marking G SOT323 Transistor BFR93A
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.

BFR93AW

Abstract: marking code R2S 34
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

BFR93AW

Abstract: BFR93A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor

BFR93AW

Contextual Info: Temic BFR93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency •

ZS 633

Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

Contextual Info: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!

SOT323

Abstract: BFR93AW BFR93A
Contextual Info: bbsa'ìai D D B s n ? IAPX tis Philips Semiconductors Preliminary specification BFR93AW NPN 6 GHz wideband transistor PH ILI PS/DISCRETE FEATURES PINNING DESCRIPTION PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability

BFR93AW

Abstract: VSO05561
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

sot-23 MARKING 636

Abstract: ZS 1052 AC ZS 633 BFR93a
Contextual Info: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data

Low Distortion Amplifiers

Abstract: BFR93AW
Contextual Info: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!

4000 npn

Abstract: 122e
Contextual Info: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106

Contextual Info: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

A1489 TRANSISTOR

Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

BFR93AW-GS08

Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: bbS3T31 D D 2 S n ? ^IS • APX Preliminary specification Philips Semiconductors BFR93AW NPN 6 GHz wideband transistor N AMER PHIL IPS /DISCRETE FEATURES b?E D PINNING Ji_ H DESCRIPTION PIN • High power gain • Low noise figure • Gold metallization ensures

BFR93AW

Abstract: spice gummel Low Distortion Amplifiers AN077 transistor marking R2s BCR108W TS-104 marking R2s
Contextual Info: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFR93A

Abstract: BFR93AW MBG207
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain