BFR380F Search Results

BFR380F

Abstract: microstrip
Contextual Info: BFR380F High IIP3 CDMA 800 LNA A High Third-Order Input Intercept Point CDMA 800 Low Noise Amplifier Overview • Inductive emitter degeneration microstrip and low impedance paths to ground at base and collector were used to increase 3rd order intercept point.

BFR380F

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 2 3 wide dynamic range application
Low voltage operation 1
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFR380F
Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

BFR380F

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

BFR380F

Abstract: AN077 GFT-13 gummel
Contextual Info: BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

BFR380F

Contextual Info: BFR380F NPN Silicon RFTransistor Preliminary data
High current capability and low noise figure for wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 2 3 1
Low noise figure: 1.1dB at 1.8GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

Contextual Info: BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage

Contextual Info: BFR380F Linear Low Noise Silicon Bipolar RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5 V supply voltage

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 2 3 wide dynamic range application
Low voltage operation 1
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR380

Contextual Info: BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage

Contextual Info: BFR380F NPN Silicon RFTransistor Preliminary data
High current capability and low noise figure for wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 2 3 1
Low noise figure: 1.1dB at 1.8GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and

IPTV schematic diagram

Abstract: AN245 BFP450 BFP750 saw EPCOS p750 cordless phone Transceiver IC WiMAX RF Transceiver BFP650 BFR380F C166
Contextual Info: BF P750 Dri ver f or Wi Ma x 3 3 00 to 37 0 0M Hz applica tio n Applic atio n N ote A N 245 Revision: Rev. 1.0 2010-10-05 RF and P r otecti on D evic es Edition 2010-10-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Cordless Phone circuit diagram

Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
Contextual Info: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TRANSISTOR 434

Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
Contextual Info: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

BFP540

Abstract: BFR380F Transistor BFP540 BFP620 applications note AN057 AN060 AN075 BFP620 BFR340F BFR360F
Contextual Info: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 7 5 H i g h T h i r d- O r d e r I n p u t I n te r c e p t P o i n t C D M A 8 0 0 Low Noise Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08

BFP620F

Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
Contextual Info: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters