BFP181 Search Results

Contextual Info: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

telefunken

Abstract: BFP181T
Contextual Info: BFP181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain

BFP181

Abstract: VPS05178
Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • Pb-free RoHS compliant 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 package 1) • Qualified according AEC Q101 * Short term description

marking w18

Contextual Info: BFP181T / BFP181TW / BFP181TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High power gain 3 4 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

87757

Abstract: infineon marking RFs BFP181
Contextual Info: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: BFP181W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

trw RF POWER TRANSISTOR

Abstract: trw rf transistor
Contextual Info: T BFP181T/BFP181TW/BFP181 TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

7449

Abstract: BFP181
Contextual Info: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

w18 transistor

Abstract: marking W18 TRANSISTOR w18 BFP181TW SOT W18
Contextual Info: BFP181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

NPN planar RF transistor

Contextual Info: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

marking W18

Abstract: BFP181TRW BFP181TW BFP181T vishay MARKING UM
Contextual Info: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343

Contextual Info: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

BFP181TW

Abstract: marking W18 BFP181TRW BFP181T w18 transistor
Contextual Info: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

BFP181R

Abstract: marking code RFs
Contextual Info: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code