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    BFP181 Price and Stock

    Infineon Technologies AG BFP181E7764HTSA1

    RF TRANS NPN 12V 8GHZ SOT143-4
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    DigiKey BFP181E7764HTSA1 Digi-Reel 334 1
    • 1 $0.18
    • 10 $0.12
    • 100 $0.09
    • 1000 $0.07411
    • 10000 $0.07411
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    BFP181E7764HTSA1 Cut Tape 334 1
    • 1 $0.18
    • 10 $0.12
    • 100 $0.09
    • 1000 $0.07411
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    BFP181E7764HTSA1 Reel 3,000
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    • 10000 $0.06946
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    Avnet Americas BFP181E7764HTSA1 Reel 4 Weeks 9,000
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    Mouser Electronics BFP181E7764HTSA1 7,698
    • 1 $0.16
    • 10 $0.092
    • 100 $0.078
    • 1000 $0.078
    • 10000 $0.064
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    Verical BFP181E7764HTSA1 162,000 9,000
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    • 10000 $0.0748
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    BFP181E7764HTSA1 9,000 3,000
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    BFP181E7764HTSA1 922 99
    • 1 -
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    • 100 $0.0186
    • 1000 $0.017
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    Arrow Electronics BFP181E7764HTSA1 9,000 4 Weeks 3,000
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    • 10000 $0.0688
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    BFP181E7764HTSA1 Cut Strips 922 4 Weeks 1
    • 1 $0.0351
    • 10 $0.0197
    • 100 $0.0186
    • 1000 $0.017
    • 10000 $0.017
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    Newark BFP181E7764HTSA1 Cut Tape 9,000 5
    • 1 $0.355
    • 10 $0.239
    • 100 $0.122
    • 1000 $0.112
    • 10000 $0.112
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    Rochester Electronics BFP181E7764HTSA1 791 1
    • 1 $0.0644
    • 10 $0.0644
    • 100 $0.0605
    • 1000 $0.0547
    • 10000 $0.0547
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    Infineon Technologies AG BFP 181 E7764

    RF Bipolar Transistors NPN Silicon RF TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFP 181 E7764 2,855
    • 1 $0.38
    • 10 $0.287
    • 100 $0.179
    • 1000 $0.094
    • 10000 $0.072
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    Bristol Electronics BFP 181 E7764 2,991
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    Infineon Technologies AG BFP181E-7764

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    Bristol Electronics BFP181E-7764 37,600
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    Quest Components BFP181E-7764 30,080
    • 1 $0.536
    • 10 $0.536
    • 100 $0.536
    • 1000 $0.536
    • 10000 $0.067
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    BFP181E-7764 2,392
    • 1 $0.315
    • 10 $0.315
    • 100 $0.1418
    • 1000 $0.0945
    • 10000 $0.0945
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    Infineon Technologies AG BFP181E-7765

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BFP181E-7765 5,320
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    tfk BFP181TRW

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BFP181TRW 3,300
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    Find more BFP181 price and stock on Findchips.com

    BFP181 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP181 Infineon Technologies For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Original PDF
    BFP181 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP181 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) Original PDF
    BFP181 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFP181E6620 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 4SOT-143 T/R Original PDF
    BFP181E7764 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-143 Original PDF
    BFP181E7764HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-143 Original PDF
    BFP181E7765 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 4SOT-143 T/R Original PDF
    BFP181R Infineon Technologies For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Original PDF
    BFP181R Infineon Technologies RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz Original PDF
    BFP 181R Infineon Technologies RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz Original PDF
    BFP181R Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP181R Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) Original PDF
    BFP181RE7764 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 4SOT-143R T/R Original PDF
    BFP181T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP181T-GS08 Vishay TRANS GP BJT NPN 10V 0.02A 4SOT-143 T/R Original PDF
    BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP181TRW-GS08 Vishay TRANS GP BJT NPN 10V 0.02A 4S Original PDF
    BFP181TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP181TW-GS08 Vishay TRANS GP BJT NPN 10V 0.02A 4SOT-343 T/R Original PDF

    BFP181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFP181 AEC-Q101 OT143

    telefunken

    Abstract: BFP181T
    Text: BFP181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFP181T D-74025 17-Apr-96 telefunken BFP181T

    BFP181

    Abstract: VPS05178
    Text: BFP181 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP181 VPS05178 OT143 Jun-21-2001 BFP181 VPS05178

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • Pb-free RoHS compliant 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP181R OT143R BFP181R

    marking w18

    Abstract: No abstract text available
    Text: BFP181T / BFP181TW / BFP181TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High power gain 3 4 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.


    Original     		PDF BFP181T BFP181TW BFP181TRW OT-143 OT-343 OT-143 OT-343 OT-343R marking w18

    Untitled

    Abstract: No abstract text available
    Text: BFP181 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP181 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R

    87757

    Abstract: infineon marking RFs BFP181
    Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP181 OT143 87757 infineon marking RFs BFP181

    Untitled

    Abstract: No abstract text available
    Text: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFP181 AEC-Q101 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP181W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP181W VPS05605 OT343

    7449

    Abstract: BFP181
    Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP181 OT143 7449 BFP181

    BFP181T

    Abstract: No abstract text available
    Text: BFP181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFP181T D-74025 17-Apr-96 BFP181T

    w18 transistor

    Abstract: marking W18 TRANSISTOR w18 BFP181TW SOT W18
    Text: BFP181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain


    Original     		PDF BFP181TW D-74025 25-Oct-96 w18 transistor marking W18 TRANSISTOR w18 BFP181TW SOT W18

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original     		PDF BFP181R OT143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP181 OT143

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 NPN planar RF transistor

    marking W18

    Abstract: BFP181TRW BFP181TW BFP181T vishay MARKING UM
    Text: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343


    Original     		PDF BFP181T BFP181TW BFP181TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R BFP181T OT-143 marking W18 BFP181TRW vishay MARKING UM

    BFP181TW

    Abstract: marking W18 BFP181TRW BFP181T w18 transistor
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 marking W18 w18 transistor

    BFP181R

    Abstract: marking code RFs
    Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP181R OT143R BFP181R marking code RFs

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor
    Text: T BFP181T/BFP181TW/BFP181 TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.


    OCR Scan     		PDF BFP181T/BFP181TW/BFP181 BFP181TW BFP181TRW BFP181T 20-Jan-99 1-408-97echnical D-74025 trw RF POWER TRANSISTOR trw rf transistor

    Untitled

    Abstract: No abstract text available
    Text: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		PDF BFP181T pr-96 17-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T 20-Jan-99 BFP181T/BFP1hay

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc