BFS17W Search Results
BFS17W Price and Stock
NXP Semiconductors BFS17W,135RF TRANS NPN 15V 1.6GHZ SC-70 |
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BFS17W,135 | Reel |
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BFS17W,135 | 1,632 |
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NXP Semiconductors BFS17W,115RF TRANS NPN 15V 1.6GHZ SC-70 |
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BFS17W,115 | Reel |
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BFS17W,115 | 3,680 |
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BFS17W,115 | 1,480 |
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Infineon Technologies AG BFS17WH6327XTSA1RF TRANS NPN 15V 1.4GHZ PGSOT323 |
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BFS17WH6327XTSA1 | Digi-Reel | 1 |
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BFS17WH6327XTSA1 | Reel | 111 Weeks | 15,000 |
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BFS17WH6327XTSA1 | Cut Strips | 1 | 98 Weeks | 1 |
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BFS17WH6327XTSA1 | 20,347 |
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BFS17WH6327XTSA1 | 34,635 |
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Infineon Technologies AG BFS17WE6327HTSA1RF TRANS NPN 15V 1.4GHZ PGSOT323 |
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BFS17WE6327HTSA1 | Reel |
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Vishay Intertechnologies BFS17W-GS09- Tape and Reel (Alt: BFS17W-GS09) |
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BFS17W-GS09 | Reel | 111 Weeks | 15,000 |
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BFS17W Datasheets (27)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17W |
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NPN Silicon RF Transistor | Original | 44.86KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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Si RF Transistors, fT < 24 GHz; Package: PG-SOT323-3; VCEO (max): 15.0 V; IC(max): 25.0 mA; Ptot (max): 280.0 mW; fT (typ): 1.4 GHz; F (typ): 3.5 dB; | Original | 66.82KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W . |
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For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA | Original | 96.2KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W. |
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RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA | Original | 44.86KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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BFS17W - NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 .. | Original | 59.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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NPN 1 GHz wideband transistor | Original | 53.57KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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NPN Silicon RF Transistor | Original | 33.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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NPN 1 GHz Wideband Transistor | Original | 26.19KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W | Siemens | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) | Original | 35.89KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W | Vishay Telefunken | Silicon NPN Planar RF Transistor | Original | 152.07KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.51KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W |
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NPN 1 GHz wideband transistor | Scan | 218.09KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W,115 |
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NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd | Original | 33.16KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17W,115 |
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BFS17 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3, BIP RF Small Signal | Original | 59.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W,135 |
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NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1.6 GHz; Frequency: 4.5 MHz; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 50 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 100 ..; Package: SOT323 (SC-70); Container: Tape reel smd | Original | 33.16KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17W,135 |
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BFS17W - NPN 1 GHz wideband transistor, SOT323 Package, Standard Marking, Reel Pack, SMD, Large | Original | 59.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17WE6327 |
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TRANS GP BJT NPN 15V 0.025A 3SOT-323 T/R | Original | 66.09KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17WE6327 |
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 15V SOT-323 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17WE6327HTSA1 |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 15V SOT-323 | Original | 514.96KB |
BFS17W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor |
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BFS17W Q62702-F1645 OT-323 | |
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 |
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 | |
Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1 |
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 | |
RF NPN POWER TRANSISTOR C 10-12 GHZ
Abstract: BCR108W BFS17W
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BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W | |
70.2 marking smd npn Transistor
Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
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BFS17 BFS17R BFS17W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 70.2 marking smd npn Transistor transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23 | |
Contextual Info: BFS17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage |
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BFS17W VSO05561 OT323 | |
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic |
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BFS17W OT323 BFS17W BFS17. MBC870 711062b 711Dfl5b | |
Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs |
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BFS17W OT323 | |
BFS17
Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038 | |
Contextual Info: ViSH A Y _ ▼ BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For broadband amplifiers up to 1 GHz. Features • High power gain |
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 | |
702 TRANSISTOR smd SOT23
Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
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BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718 | |
70.2 marking smd npn Transistor
Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
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BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23 | |
Contextual Info: BFS17W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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BFS17W | |
MBG240
Abstract: BFS17 BFS17W
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BFS17W OT323 BFS17W BFS17. MBC870 MBG240 BFS17 | |
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"marking E1"
Abstract: BFS17 BFS17R BFS17W
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1" | |
BFS17
Abstract: BFS17W
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711002b Dbe1232 BFS17W OT323 BFS17. OT323. BFS17 | |
mar 806Contextual Info: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage |
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BFS17W VSO05561 OT323 mar 806 | |
SOT343R
Abstract: SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR
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PMBHT10 PBR941 PBR951 PMBTH81 BFG310/XR BFG325/XR OT323, BFS17W PRF547 PRF957 SOT343R SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR | |
BFS17
Abstract: BFS17R BFS17W BFS17 E1
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BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1 | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, |
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BFS17W OT323 BFS17W BFS17. MBC870 R77/02/pp8 | |
BCR108W
Abstract: BFS17W 1511V
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BFS17W OT323 BCR108W BFS17W 1511V | |
BFS17W
Abstract: MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking
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BFS17W OT323 BFS17W BFS17. MBC870 MB0240 OT323. 711005b MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking | |
BFS17
Abstract: BFS17W
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BFS17W OT323 BFS17W BFS17. MBC870 R77/02/pp8 BFS17 | |
70.2 marking smd npn Transistor
Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
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BFS17 BFS17R BFS17W OT-23 2002/95/EC 2002/96/EC OT-323 BFS17 OT-23 70.2 marking smd npn Transistor smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17W transistor smd marking NA sot-23 |