SOT343R Search Results

Contextual Info: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

Contextual Info: CM PA K -4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

Contextual Info: CM PA K-4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

Contextual Info: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage

Contextual Info: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION

transistor K 2333

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain

MBC13916NT1

Abstract: sot343r MBC13916 Isolation amplifier and application
Contextual Info: SOT343R MBC13916 High reverse isolation in a cascode LNA Overview 0.9 dB at the device level, and a noise figure Freescale Semiconductor's MBC13916 is a NF of 1.25 dB in a typical circuit at 900 MHz. cost-effective, high isolation cascode amplifier At 1.9 GHz, the NFmin is 1.9 dB, and the NF

Contextual Info: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 2 w M B c 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1

chip die npn transistor

Abstract: BFG310W/XR
Contextual Info: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits

A7 NPN EPITAXIAL

Abstract: Philips FA 145 BFG310W/XR BFG310W
Contextual Info: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

SOT343R footprint

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering SOT343R 2.7 1.85 0.675 0.6 0.5 3x (3x) (3x) solder lands 2 3 solder resist 0.65 1.3 2.5 0.55 1 solder paste 4 occupied area 0.7 0.8 0.875 Dimensions in mm 0.625 (4x) sot343r_fr 0.55 (4x)

SOT343R

Abstract: Bp SOT343R
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1

DRO lnb

Abstract: BFG424W
Contextual Info: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

Contextual Info: CM PA K -4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits

Contextual Info: CM PA K -4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits

SOT343R

Abstract: 12238
Contextual Info: SOT343R Vishay Semiconductors SOT343R Package Dimensions in mm Inches 96 12238 Document Number 84032 Rev. 1.2, 12-Jan-07 www.vishay.com 1 SOT343R Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

Contextual Info: DISCRETE SEMICONDUCTORS BGA2001 silicon MMIC amplifier Preliminary specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R

Contextual Info: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

marking code AN mmic

Abstract: BGA2002 RF TRANSISTOR 2.5 GHZ s parameter MMIC code D mmic marking A 4 pin dual-emitter amplifier marking 4 marking code 02 mmic mmic marking D M3D124
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2002 silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Sep 01 Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 PINNING SOT343R FEATURES • Low current, low voltage

transistor marking codes list

Abstract: BFG325W
Contextual Info: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

Contextual Info: CM PA K-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits

SOT343R

Abstract: Bp SOT343R
Contextual Info: Package outline Philips Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e