BUT12A Search Results

BUT12AX

Abstract: BUT12
Contextual Info: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

BUT12

Abstract: BUT12A
Contextual Info: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 PHILIPS Philips S em ico n d u cto rs Printed from www.freetradezone.com, a service of Partminer,

TRANSISTOR but12

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators

BUT12A

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,

transistor but12af

Abstract: but 12af BUT12F BUT12 BUT12AF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS

NPN Transistor TO220 vcc 150V

Abstract: BUT12A transistor IC 12A
Contextual Info: BUT12A SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220 PARAMETER

BUT12A

Abstract: BUT12
Contextual Info: SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

NPN Transistor TO220 VCEO 50v i 10A

Abstract: BUT12
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12

Abstract: BUT12AF BUT12A BUT12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12A

Abstract: BUT12
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

BUT12AF equivalent

Abstract: BUT12AF BUT12F
Contextual Info: Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING

BUT12AX

Abstract: BUT12
Contextual Info: Inchange Semiconductor Product Specification BUT12AX Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION

BUT12

Abstract: BUT12A BUT12AF BUT12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12A

Abstract: BUT12 MGE246
Contextual Info: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips S em ico n d u cto rs I C m i n e r . c o m E l e c t r o n i c - L i b r a r y S e r v i c e C o p y R i g h t 2003

BUT12

Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

BUT12AF equivalent

Abstract: BUT12 BUT12A BUT12AF BUT12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12AF equivalent

Abstract: transistor but12af BUT12F BUT12AF BUT12 dk 57
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

BUT12

Abstract: BUT12A
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

but12 transistor

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A