BUY90 Search Results

Contextual Info: BUY90 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2S8834 NEC

Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A

2N4001

Abstract: Transistor 2N4001 2n4001 TRANSISTOR to-39 2n4037 BSV64 P9 Package BFX34 2N3420 2N4036
Contextual Info: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP. Package JO-39 TO-39 TO-39 TO-39 TO-39 TO-39 V ceo 1A 2A 3A 5A 7.5A 10A 40 2N4037* !c Volts BSV60 2N3418 BUX34 2N3420 BUY80 BUY90*

BUY90

Contextual Info: BUY90 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

BUY90SMD

Contextual Info: BUY90SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed

Contextual Info: BUY90 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

Contextual Info: Search Results Part number search for devices beginning "BUY90" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUY90 PNP TO39 60V 3A 40 100 5/1 60MHz 20W

CV8842

Abstract: HP5082 CV7404 CV7746 CV8889 CV7431 CV7477-0 CV7463 hp5082-0180csm HP5082-2800CSM
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUY82 CECC BUY86 BUY87 BUY89 BUY90 BUY90-SM BUY91 BUY91-SM BUY92 BUY92-SM CV10807-0 CV12253L CV12253L-0 CV7061-0 CV7062-0 CV7065-0 CV7333-0 CV7334-0 CV7341A-0 CV7342A-0 CV7343A-0 CV7344A-0 CV7345A-0

BU218

Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY80 BUY81 BUY82 BUY90
Contextual Info: NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH C U R R E N T SW ITCHING T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and M ilitary equipments. This table should be referred to in conjunction w ith the LF Power Transistor Product Guide

CV9507

Contextual Info: SEMELAB LTD 37E T> "type No. OptlonlllV BUY51 BUY51A BUY52 BUY52A BUY53 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T061 T03 T061 TÔ3 T061 BUY53A BUY54 BUY54A BUY55 BUY57 HI-REL HI-REL HI-REL SCREEN HI-REL NPN NPN NPN NPN NPN BUY58 BUY68 BUY69A

BUY80

Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
Contextual Info: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*

N4001

Abstract: to-39 TO39 2N3419 BUY80 BUX 34 npn 2a 2N3421 2N4036 2N4037
Contextual Info: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked w ith * which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 TO-39 TO-39 TO-39 TO-39 TO-39 2A 3A 5A 7 5A 10A BUY81 BUY92*

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

transistor T43

Contextual Info: 5L.E D • tn7QS7fl 0007004 T43 ■ Z E T B NPN HIGH CURRENT SWITCHING "r - 3 S “- o < TABLE 12 - NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments.

2N40361

Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80
Contextual Info: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39

Contextual Info: asc » m n?as7fl oaai7bb 3 «izetb ' . - ZETEX SEMICONDUCTORS NPN HIGH CURRENT SWITCHING T ABLE11 N P N S IL IC O N P L A N A R H IG H C U R R E N T S W I T C H IN G T R A N S I S T O R S The transistors shown in this table are designed for high current, high dissipation switching

Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY DE | 7 2 2 0 S 3 3 □004^54 0 95D 04954 SEMICOND/DISCRETE -r-sr-/7 SWITCHING TABLE 6 - N P N SILICO N PLANAR HIGH CURRENT SW ITCHING T R A N SIST O R S The transistors shown in this table are designed for high current, high dissipation switching applications

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

BUX51

Abstract: NPN BUX51 BUX49 BUV18S cv10253 BUX43 BUX50 BUX52 BUX53 BUX54
Contextual Info: iS E M E L A B /ff- VI 0- MAiyyFACTuniiyGzd ' c Polarity Package v CEO conl /BUX42 BUX43 BUX49 BUX50 BUX51 NPN NPN NPN NPN NPN T03 T03 T039 TO39 T039 250 325 90 125 200 12 10 3.5 3.5 3.5 15-45 15-60 20-60 20« 20-60 4 4 4 4 4 1.5 1 BUX52 BUX53 BUX54 BUX59

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

power transistors table

Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY81 BUY82 BUY90 BUY91
Contextual Info: NPN HIGH CURRENT SWITCHING TA B LE 11-N P N SILICO N PLA N A R HIGH CU R R EN T SW ITCHIN G TR A N SIST O R S < The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments.

BUY46

Abstract: BDY69C DIODE T03 BUY21 BUY22 BUY71 buy94 BUY12 buy20 BUY23
Contextual Info: Ô1331Ô7 D00GM57 ÖS3 MÖE D SEMELABE ISMLB SEMELAB LT BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rel Code BUX97B BUX98 BUX98A BUX98AF BUX98B BUX98C BUX98CPF BUY11 BUY12 BUY18S BUY20 BUY21 BUY22 BUY23 BUY24 BUY29 BUY30 BUY41 BUY46

TRANSISTOR GUIDE

Abstract: 2N3419 2N3421 BU217 BU218 BUY80 BUY81 BUY82 BUY90 BUY91
Contextual Info: NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH C U R R E N T SWITCHING T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide

TRANSistor BC108

Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100