BUZ905 Search Results

BUZ900P

Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
Contextual Info: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

Contextual Info: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

Contextual Info: BUZ905 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

buz901 buz906

Abstract: BUZ905 magnatec mosfets BUZ901 BUZ906
Contextual Info: BUZ905 BUZ906 IV I A CB INI A MECHANICAL DATA P-CHANNEL POWER MOSFET Dim ensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

buz906dp

Contextual Info: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING

BUZ905X4S

Abstract: BUZ906X4S 200v 100mA mosfet n-channel 500w power mosfet
Contextual Info: BUZ905X4S BUZ906X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )

BUZ906

Abstract: BUZ905 BUZ901 BUZ900
Contextual Info: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

BUZ901P

Abstract: buz900p BUZ906P
Contextual Info: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * *16.26 a o c i(0.640) ne/ni * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET

Contextual Info: BUZ905 BUZ906 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

BUZ906D

Abstract: BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D
Contextual Info: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED

Contextual Info: BUZ905D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)16.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55

Contextual Info: BUZ905X4S BUZ906X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS A ài CO "T j 0.75 (0 .0 3 0 ) ^ 0.85 (0 .0 3 3 ) Ë* to CO FEATURES 1 JJJ J V • HIGH SPEED SWITCHING

Contextual Info: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

Contextual Info: BUZ905P Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

Contextual Info: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED

BUZ906D

Abstract: BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D
Contextual Info: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

BUZ905D

Contextual Info: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

Audio Power Amplifier MOSFET TOSHIBA

Abstract: LM4072 2sk1058 2SJ162 100w mosfet audio power amplifier lm4702 OUTPUT STAGE INFORMATION AN1645 BD149 AN-1645 IRFP240 BJT BD139
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1645 Troy Huebner 2007౎5ሆ ᆅჾ සࢆ჋ስMOSFET !!!!Ԩᆌᆩጀ๥༵ࠃକ࠲ᇀெࡔࡔॆӷ‫༹ڞ‬ፌႎ‫ߛڦ‬Ⴀ āāLM4702‫ڦ‬༬Ⴀ၌዆କ‫ܔ‬MOSFETഗॲ‫ڦ‬჋ስăፌዘ ీĂ‫ߛג‬ԍኈ‫ڦ‬ᅼೕ‫ٷݣ‬ഗൻ‫ۯ‬IC‫ڦ‬ยऺኧ‫׼‬႑တă

BUZ900D

Abstract: BUZ901D BUZ905d equivalent BUZ906D BUZ906d equivalent BUZ905D
Contextual Info: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

2SK1058 MOSFET APPLICATION NOTES

Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
Contextual Info: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30D40

Contextual Info: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

Contextual Info: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •