BUZ905P Search Results

BUZ900P

Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
Contextual Info: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

BUZ901P

Abstract: buz900p BUZ906P
Contextual Info: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * *16.26 a o c i(0.640) ne/ni * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET

Contextual Info: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

Contextual Info: BUZ905P Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •

Contextual Info: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,

BUZ900P

Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
Contextual Info: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED

Contextual Info: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Contextual Info: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P

BUZ901P

Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
Contextual Info: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50

BUZ900

Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227
Contextual Info: Magnatec. Мощные комплиментарные полевые транзисторы для аудио техники Компания Magnatec является подразделением Semelab Официальный дистрибьютор SEMELAB в России - компания АПЕКС.