BC559 Search Results

BC560C

Abstract: BC559 BC559B BC560
Contextual Info: Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector–Emitter Voltage VCEO –30 –45 Vdc Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Em itter Voltage VCEO -3 0 -4 5 Vdc Collector-Base Voltage

BC560

Abstract: TRANSISTOR bc560 BC559
Contextual Info: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A For Complementary with NPN Type BC549/550. N E K MAXIMUM RATING Ta=25 G J D SYMBOL -30 VCBO Collector-Base Voltage BC560 BC559 V -50 VEBO -5 V Collector Current

Contextual Info: SWITCHING AND AMPLIFIER •Complement to BC558 SWITCHING AND AMPLIFIER ·Complement to BC559 ABSOLUTE MAXIMUM RATINGS Characteristic TO-92 TA=25 Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO

bc556

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance

Contextual Info: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A ᴌFor Complementary with PNP Type BC559/560. N MAXIMUM RATING Ta=25ᴱ 30 VCBO BC550 BC549 Collector-Emitter Voltage 50 30 VCEO 45 UNIT

BC559

Abstract: BC557 hie hre hfe BC557 pin configuration npn transistor BC557 Amplifier with transistor BC549 pin configuration NPN transistor BC558 pin configuration pnp transistor BC557 pin configuration pnp transistor BC558 pin configuration transistor BC549 BC546
Contextual Info: ST BC556 … BC559 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. the type BC556 is available in groups A and B, however, the types

BC550

Abstract: Amplifier with transistor BC549 C420-800 bc549 transistor bc549 BC549 NPN transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • For Complementary with PNP Type BC559/560. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING BC549 Collector-Base Voltage 30 V V CBO BC550

BC56C

Abstract: BC560 BC 559 philips BC 560 philips BC559A BC559B BC560 equivalent BC560B BC559 bc 560 equivalent
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE 1> •3 ji 0 Q E 7 5 Ö 1 Tbb H A P X bbäB^Bl L BC559 BC560 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for tow-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

BC560C

Abstract: BC559C BC559B
Contextual Info: MOTOROLA Order this document by BC559B/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors BC559B BC559C BC560C PNP Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC559X BC560C Unit C o lle c to r-E m itte r Voltage VCEO -3 0 -4 5 Vdc C o lle c to r-B a s e Voltage

transistor B 560

Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance

BC559B

Abstract: BC560C BC559C BC56-0c
Contextual Info: MOTOROLA Order this document by BC559B/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors BC559B BC559C BC560C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC559x BC560C Unit Collector – Emitter Voltage VCEO –30 –45 Vdc

BC559

Abstract: pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC557 hie hre hfe BC556 Amplifier with transistor bc549 BC549 input BC557 BC549 NPN transistor download datasheet pin configuration npn transistor BC557
Contextual Info: BC556 THRU BC559 Small Signal Transistors PNP TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ max. ∅ .022 (0.55) ♦ .098 (2.5) FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into

BC 560 philips

Abstract: BC560 philips BC560 d0420 BC559 philips semiconductors AL102 BC560C equivalent BC560 equivalent BC560B BC560C
Contextual Info: BC559 BC560 PHILIPS INTERNATIONAL SL E D • 7 1 1 Q û 2 b 00420*42 75b ■ PH IN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, prim arily intended fo r low-noise inp ut stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Contextual Info: Switching Low Noise Transistors Part No. BC549A BC549B BC549C BC550A BC550B BC550C BC559A BC559B BC559C BC560A BC560B BC560C 20070515 Polarity NPN PNP VCEO V 30 30 30 45 45 45 -30 -30 -30 -45 -45 -45 IC (mA) 100 100 100 100 100 100 -100 -100 -100 -100 -100

bc560

Abstract: BC560C philips bc559 BCS59b transistor bc560b BC560 philips BC560C philips BC559B BC559c PHILIPS transistor bc560b
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • General purpose switching and amplification.

of transistor bc558

Abstract: Transistor NPN BC556 BC559 BC557 pin BC557 pin configuration npn transistor BC557 BC557 hie hre hfe BC558 NPN Transistor transistor BC558 base collector emitter BC556
Contextual Info: ST BC556 … BC559 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. the type BC556 is available in groups A and B, however, the types

bc559c

Abstract: MAM281
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current max. 100 mA

BC778-25

Abstract: bc778 BC738-40
Contextual Info: De v ic e BC557 BC557A BC557B BC558 BC558A BC558B BC558C BC559 BC 559 A 8C559B BC559C BC560 BC560A BC560B BC560C TYPf PACKAGE BVCFO BVCBO 8VEBO IC B O @ V C B M IN 15 15 15 15 15 30 30 30 30 30 5 5 5 5 5 15 15 15 15 15 30 50 50 50 50 5 5 5 5 5 IV I M IN PNP

transistor potencia

Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC558B

Abstract: bc560
Contextual Info: BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • • Switching and Amplifier High-Voltage: BC556, VCEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 1 TO-92 1. Collector 2. Base 3. Emitter