Untitled
Abstract: No abstract text available
Text: 0 . OPTEK Product Bulletin OPB755N June 1996 Reflective Object Sensor Type OPB755N PIN I COLLECTOR PIN 2 KEY PLUG WHITE PIN 3 EMITTER PIN 4 ANODE (RED) PIN 5 CATH00E (BLACK) (GREEN) Features • High contrast ratio 1000 to 1 minimum • 12.0" + 0.5" min. UL#1429 26 AWG
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OPB755N
CATH00E
OPB755N
OPB755T.
OPB750
OPB760/OPB77Q
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diodo A6
Abstract: PJ 63 MM diode Wf VQE 23 F wf vqe 24 d DIODO LED ir wf vqe 24 f WF vqe 24 e WF VQE 23 E din 40040 humidity WF VQE 22 d
Text: SIEMENS AKTIEN6ESELLSCHAF ^7E D • fl235bOS 00272flb b « S I E G S IE M E N S SFH 601G SERIES PHOTOTRANSISTOR OPTOCOUPLER 63 Package Dimensions in Inches mm 807(7.81 29\ (7.4) J p o ti) E E E a 3 7 ] BASE AN00C E ^ CATH00E E 3 NC E COLLECTOR ■<d J^EMITTï B
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fl23SbOS
601G-1,
601G-2
601G-3
601G-4
E52744
-X001
diodo A6
PJ 63 MM diode
Wf VQE 23 F
wf vqe 24 d
DIODO LED ir
wf vqe 24 f
WF vqe 24 e
WF VQE 23 E
din 40040 humidity
WF VQE 22 d
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Amilo
Abstract: 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4717 J 1N4679
Text: 1N4678 thru 1N4717 M ierosemi Corp. Tbp horte e x p e ls SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: (6 0 2 9 4 1 -6 3 0 0 FE A TU R E S SILICON 250 mW ZENER DIODES • LOW OPERATING C U R R EN T AT 50/iH • STANDARD ± 5 % VOLTAGE T O LERAN C E
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1N4678
1N4717
50//A
DO-35
250mW
400mW
66mW/Â
28mW/Â
100mA:
100yuA
Amilo
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4717
J 1N4679
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transistor s0014
Abstract: S0014
Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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fl23SbOS
00272flb
CATH00E
transistor s0014
S0014
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2sa 102 transistor
Abstract: No abstract text available
Text: International S Rectifier HEXFRED P D -2 .3 7 9 Provisional Data Sheet HFA35HB60 ULTRA FAST, SOFT RECOVERY DIODE 600V, 22A Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units Vbr 600 V lF AV 22 A trr 75
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HFA35HB60
00A//IS,
00A/pS,
O-254AA
4fl55455
2sa 102 transistor
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Untitled
Abstract: No abstract text available
Text: International M Rectifier_ HEXFRED PD-2.371 Provisional Data Sheet HFA35HB120C ULTRA FAST, s o f t RECOVERY DIODE Major Ratings and Characteristics Features: 1200 V lF AV 15 A trr (per leg) 95 ns Qrr (per leg) 380 nC — — — — — — — —
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HFA35HB120C
00A//IS,
00A//JS,
00A//1S,
O-254AA
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Untitled
Abstract: No abstract text available
Text: 4QE D • ISENI 34^=1736 000105=1 1 FASCO INDS/ SENISVS CLM6200 CLM6200 CLM6500 ►.220-1 UN. ^ LED- ■CATH00E.0l0X.023 r 1 ■f .130 -l JOO T ANOOE.OlO X.0 2 0 C C U L.EA0S Photoconductor Isolators ^ 2 5 0 0U CLM6500 ■KOJO . ->09 This PHOTOMOD Series combines solid state
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CLM6200
CLM6500
CATH00E
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1n9668
Abstract: 1N9750 1N9688 IC 4011 IC HE 4011 IN973b diode zener SD 33 4011 IC sd 150 zener diode HE 4011
Text: 1N957B thru 1N992B DO-7 Microsemi Corp. f The cmhfp e rp e 'îs SC O T T SD A L E , A Z For more inform ation call; 6 0 2 941-6300 F E A TU R E S SILICON 400 mW ZENER DIODES • 6.8 TO 200V Z E N E R V O LT A G E RAN GE • 1N962B THRU 1N992B H A V E JA N , JA N T X AND JA N T X V Q U A LIFIC A T IO N S
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1N957B
1N992B
1N962B
L-S-19500/117
1N973B
1n9668
1N9750
1N9688
IC 4011
IC HE 4011
IN973b
diode zener SD 33
4011 IC
sd 150 zener diode
HE 4011
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display 7 segmento sm 4105
Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Text: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)
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MM5309
MM5311
J28592
IM-CP70M17/PRINTED
display 7 segmento sm 4105
NS_Databook_77
MA1012
MA1002
MM5799
MM5318
MM57109
mm5782n
Remote Control Toy Car Receiver IC tx2
MM5871
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D335
Abstract: D336 D334 1490I
Text: PD-2.253 kiternational ü r ]Rectifier is 3cm q . s e rie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Characteristics 153CMQ. Units 150 A 80 to 100 V < P -5 |« s n e 7000 A @75Apk,Tj-125°C 0.80 V -55to175 °C lF AV Rectangular
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153CMQ
153CMQ.
100Forward
D-335
D-336
D335
D336
D334
1490I
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in5232
Abstract: 1NS263 1N624 1NS251 zener IN5232 opto 22 ad7 zener 8w L 1N5221 IN5243 1N5224
Text: motorola SC -CDIODES/OPTO} 15E D I b 3 ti7 a s s O D 7 tifl4 fi 3 | .r-//-/y MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5221A, B thru 1N5281A, B Designer's Data Sheet 500 M illiwatt Hermetically Sealed G lass Silicon Zener Diodes • • • • G L A S S Z E N ER DIO DES
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D0-204AH
00-204AA
1N5221
1N5281
in5232
1NS263
1N624
1NS251
zener IN5232
opto 22 ad7
zener 8w L
IN5243
1N5224
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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701T1
Abstract: 301t1
Text: 04/21/98 13:20 From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 To Lynn Murphy 8 f l ^ i T C ^ R O L A 02107 rutlni |.ill i l . r i n m i l SEMICONDUCTOR TECHNICAL DATA M M SD 101T1 M M SD 301T1 M M SD 701T1 SO D-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our
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D-123
MMSD101T1,
MMSD301T1,
MMSD701T1
MMBD101LT1,
MMBD301LT1,
MMBD701LT1
OT-23
101T1
301T1
701T1
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MV209 equivalent
Abstract: DIODE CQ 521 MV209 MV209 diode tcc 300
Text: MV209 SILICON W C VO LTAGE VA R IA BLE CAPACITANCE DIODE SILICO N EPICAP DIODE 2 6 - 3 2 pF . . . designed fo r V H F T V tuning, A F C , general frequency control and tuning applications; providing solid-state reliability in replace ment o f mechanical tuning methods.
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MV209
33AS8,
MV209 equivalent
DIODE CQ 521
MV209
MV209 diode
tcc 300
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MCR81
Abstract: MCR80 MCR82 300hms 1T15
Text: MCR80 series silicon MCR8I series MCR82 series THYRISTO RS PNPN 80 A M P E R ES RM S 50 thru 8 0 0 V O L T S SILICON CONTROLLED R E C T IF IE R S MCR80 SER IES . . . designed for high power industrial and consumer applications in power and speed controls such as w elders, furnaces, motors, space
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MCR80
MCR81
MCR82
MCR80-
MCR81-
MCR82-
300hms
1T15
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Untitled
Abstract: No abstract text available
Text: surfeeleds 1210 package style SML-LX121OXXC-TR 3 .2 0 [0 .1 2 6 ] ¿ H 0 .65 [0 .0 2 6 ] TM Half Moon Solder Terminals r 2.20 [0 .0 8 7 ] - p - - î 2 .70 [0 .1 0 6 ] _J 1.40 [0 .0 5 5 ] Dual Color - CATHODE MARK rirnvrr-E1a-b R 0.25 [RO.OIO]
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SML-LX121OXXC-TR
CATH00E
210IIC
21OSRSGC
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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transistor sot t06
Abstract: LM431ACM MARKING ZT SOT23 TRANSISTOR LM431BCM3 LM431BIM3 LM431AIM3 LM431BIM3N1C LM431ACM3 LM431 t06 sot 23 transistor
Text: , S e m i c o n d u c t o r November 1996 LM431 A djustable Precision Z en er Shunt R egulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire tempera ture range of operation. The output voltage may be set at
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LM431
LM431
transistor sot t06
LM431ACM
MARKING ZT SOT23 TRANSISTOR
LM431BCM3
LM431BIM3
LM431AIM3
LM431BIM3N1C
LM431ACM3
t06 sot 23 transistor
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MLED600
Abstract: No abstract text available
Text: MLED600 V IS IB L E RED LIGH T-EM ITTIN G DIODE LIGH T-EM ITTIN G DIODE V IS IB L E RED PN G A LLIU M A R SE N ID E PHOSPHIDE . . . designed for appi¡cations requiring high visibility, low drive power and very fast response time. This device is used in panel and circuit
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MLED600
MLED600
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zener diode 2b3
Abstract: NID 1
Text: M icroisemi Corp. SCOTTSDÀf.E. A7 F o r m o re in fo rm a i ion c a l i : ^ 0 2 9 4 1 - 6 .1 0 0 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATU RES • • • • SILICON 400 mW LOW NOISE ZENER DIODES ZENER VOLTAGE 1.BV to 100V ALL HAVE JAN, JANTX and JANTXV •1 QUALIFICATIONS TO MII-S-1950D/435
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1N4099
1N4135
1N4614
1N4627
MII-S-1950D/435
1N4099-1N4135
1N4614-1N4627
zener diode 2b3
NID 1
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marking B43 diode SCHOTTKY
Abstract: marking qa39 104j 100v scr pin connection TO66 package marking B33 diode ti57 ir2110 igbt K1168 irf5300 sot-89 marking DQ
Text: Die and Case Outlines DIE AND CASE OUTLINE INDEX Product Power Integrated Circuits . Microelectronic Relays .
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FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
IRCI480-.
PD150-.
PD180-.
marking B43 diode SCHOTTKY
marking qa39
104j 100v
scr pin connection TO66 package
marking B33 diode
ti57
ir2110 igbt
K1168
irf5300
sot-89 marking DQ
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Untitled
Abstract: No abstract text available
Text: surfeeleds axial leaded SSL-LXA228XC-TR21 • Transfer Molded 0.61 [ 0 .0 2 4 ] 01.90 0 .3 1 tO.0 1 2 ] 0 .4 0 ± 0 .0 5 [0 .0 1 6 1 0 .0 0 2 ] Features/Options "I • Epoxy Lead Frame, Molded Axial Package • Lead Frame Soldering Reliability • State-of-the-Art LED Die
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SSL-LXA228XC-TR21
CATH00E
3LXA228SOC-TR21
SSL-LXA228SUGC-TR21
SSL-LXA228SRC-TR21
SSL-LXA228SYC-TR21
SSL-LXA228
SSL-LXA228USBC-TR21
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