CBR30 Search Results

CBR30B006F

Contextual Info: PCB Mounted Receptacles CBR30 - longer tails - .100" Grid Features: • • • • • • • • • .100" 2.54 mm grid - 2 rows 6 to 80 contacts - bottom entry bifurcated contact design ( N/S orientation ) selectively plated gold contact Ni underplate suitable for no-clean operation

Contextual Info: CBR30-080 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

Contextual Info: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï | T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

Contextual Info: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

CR508

Contextual Info: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010

Contextual Info: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " *• 'ï 3 if, '*ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR

Contextual Info: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT | • CENTRAL S E M I C O N D U C T O R ^ »e | OQDOISL T | CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA

C5Z15B

Abstract: 5 watt zener diode
Contextual Info: CENTRAL SEMICONDUCTOR , £j¡ \ j>f| nfl«nb3 ODDOat-S 3 Y ^ l/'tS ^ 3 Watt Zener Diode • 5% Tolerance • Case C CENTRAL TYPE NO. C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B C3Z10B C3Z11B C3Z12B C3Z13B C3Z14B C3Z15B C3Z16B C3Z17B C3Z18B C3Z19B C3Z20B C3Z22B

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N2800

Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

MPS-A42

Abstract: MPS-A43 K MPS a42
Contextual Info: 19 8 9 9 6 3 /CENTRAL’S E M ICONDUCTOR" ó 1C 00232 • T ~ ^ &mSïfiâ bï g@esilg@6n^ stei? @g*p. de| MPS-A42 central g@BiiIe®si§lye£@r €®rp. C e n tra i s s m le o n c fu e to r C orp. ~ / 7 0000535 d MPS-A43 NPN JP SILICON HIGH VOLTAGE TRANSISTORS

CQ920

Abstract: CQ92A CQ92B CQ92D CQ92F CQ92M cbr3-p
Contextual Info: n a ^ t a _CENTRAL S EM IC ON DUCTOR dooostt ^ T ~ T - ¿ s '- // CQ92F CQ92A CQ92B CQ92D CQ92M gGEmiËSQÊBgSP&û ^ @@^3* s@6û^@@nG9QBefior e @ p p . €@Bifrcal SeniBeO BItiU C tO r C S’p . central semiconductor Corp. TRI AC 0.8 AMPS 50 THRU 600 VOLTS

CS55AZ

Abstract: CS55BZ CS55DZ CS55FZ CS55MZ KSH 123 scr 209
Contextual Info: central semiconductor ]>EjnflTib3 DDDD3D7 CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ e &aGb:eJ Stop.U£Ë^5BS3 Suj@? ©Qirpo £t>^3U gdBMBieeoBcgasefQE3 e@ i?g . GSBtâral Ê©raS(g@Bi2fiysÊ@p C e ^ p . J P SCR Central semiconductor Corp. 0.8 AMPS 50 THRU 600 VOLTS

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C

IN4702

Abstract: 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4698 1N4699 1N4700
Contextual Info: 1 9 8 9 9 6 3 CEN TRAL : : V ~T Ï g ngi?ga9 g KHS@©BBe3e5gfi@E? @ ® r ; p o '~ f -U '0 '7 61C 0 0 2 7 7 SEM ICONDUCTOR DE | l'iôT' it .B 00 00 57 7 | 1NA678 THRU 1N 47 H €©&a€ffS9B LOW LEVEL SILICON ZENER DIODE C@iifral Ê @ ü îis@ B îe isg st csr