CDM6116 Search Results

6116A

Abstract: CDM6116 CDM6116ACD/3
Contextual Info: HARRIS SEMI COND S E C T OR 37E D 43G2271 GQ2bSn T I HAS High-Reliability CM OS LSI Devices _ CDM6116AC/3 A7 -A6 -AS-A4 -A3 -A2-Al -AO — X/OI -1/02 -1/03 -vss — High-Reliability CM OS 2048-Word by 8-Bit LSI Static RAM Features: • Fully static operation

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

CDM6116

Abstract: 369-42
Contextual Info: High-Reliability CMOS LSI Devices CDM6116BC/3 Advance Information High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM F e a tu re s : • F u lly s ta tic o p e ra tio n m S in g le p o w e r s u p p ly : 4 .5 to 5.5 V ■ A ll in p u ts a n d o u tp u ts d ir e c tly TT L c o m p a tib le

cdm6116a-3

Abstract: CDM6116A-2 RCA-CDM6116A CDM6116 cdm6116-a CDM6116A
Contextual Info: HARRIS SEMICOND SECTOR 37E D B 43DS571 D0S3b3'ì b B HAS Random-Access Memories R A M s . T -4 6 -2 3 -1 2 CDM6116A Product Preview 1 24 - V0D 2 23 - AS 22 - A9 3 4 21 - WE 5 20 - 0Ê 6 id - AIO 7 le - CE 8 17 - 1/08 9 16 - 1/07 10 15 -1/06

CDM6116

Contextual Info: 37E D HARRIS SEMICOND SECTOR I 43QE271 QG2b224 3' « H A S - High-Reliability CMOS LSI Devices CDM6116BC/3 Advance Information High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM A 7 - 1 A 6 - 2 2 4 - V0D 2 3 - AS 22 - A9

Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s tatic operation • S ingle po w e r supply: 4.5 to 5.5 V ■ A ll inpu ts and ou tputs d ire c tly TTL com patible ■ 3-state ou tputs

6116A

Abstract: CDM6116
Contextual Info: G E SOLID STATE 17E D • 3ä75Gfil QQES027 =! Hlgh-Reliability CMOS LSI Devices - CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: ■ F u lly sta tic op eratio n ■ S ingle p o w e r sup ply: 4.5 to 5.5 V

M92C

Contextual Info: G E SOLID STATE 17E D • 3A7SGÔ1 G05SG32 2 ■ _ High-Reliability CMOS LSI Devices - ¿4\o-Z b-\2. CDM6116BC/3 Advance Information High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM A 7 - 1 A 6 - 2 A 5 - 3 2 2 - A9

Contextual Info: High-Reliability CMOS LSI Devices CDM6116BC/3 Advance Information - 1 24 A 6 - 2 23 A S - 22 A4 - 3 4 21 A 3 - 5 20 A2 6 19 A7 High-Reliability CMOS 2048-Word By 8-Bit LSI Static RAM AI - AO - Features: • F u lly static operation

ina28-terminal

Abstract: CDM6116 CDM6116AC 2CS-40498 CDM6116ACD/3
Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s ta tic o p e ra tio n ■ S in g le p o w e r s u p p ly : 4.5 to 5.5 V ■ AH in p u ts a n d o u tp u ts d ire c tly TT L c o m p a tib le

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

MK4802

Abstract: BR6116-100 BR6116-45 MK48Z02 CDM6116A-9 F3528-35 24PIN CY7C128-45 CY7C128-55 CY7C128A-15
Contextual Info: - 16 K X nMOS 'f S t a t i c f RAM iî 2 0 4 8 x 8 « % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M ¿&&ÍEH m 2 4 P I N IDD aax (ibA)

BR6116-100

Abstract: inverter welder schematic BR6116-45 CDM6116A-3 CMD6116-1 24PIN CDM6116A-9 CMB6116-2 UPD446 CDM6116
Contextual Info: - 48 - 16 K m % it £ ÍS KSI OC A TMC max ns) KAC max (ns) 4 CMOS - , TOE max (ns) TOH din (ns) * y TOD max (ns) y S t a t i c RAM (2 0 4 8 x 8 ) n m TtfP T U S itin min (n¡;) (as) TDH rain (ns) TfD (ns) Tffl max (ns) V D D or V C C (V) 24P I N 6 II A

rom 1K x 8

Abstract: CDM6116 cdp1833 CDP1866 CDP1882 CDP1882C CDP1882CE CDP1882CEX CDP1882D cdp1800series
Contextual Info: CDP1881C, CDP1882, CDP1882C CMOS 6-Bit Latch and Decoder Memory Interfaces March 1997 Features Description • Performs Memory Address Latch and Decoder Functions Multiplexed or Non-Multiplexed The CDP1881C, CDP1882 and CDP1882C are CMOS 6-bit memory latch and decoder circuits intended for use in