LH5116 Search Results

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

LH5116-10F

Abstract: 13B1
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH5116-10F 16K SRAM Model Number: LH511613 Spec. Issue Date: Oct. 26, 2004 Spec No: EL16X147 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply

Contextual Info: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

5116 ram

Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5116S

Abstract: LH5116SN
Contextual Info: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply

LH5116H

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

Contextual Info: FEATURES • 2,048 • Access time: 1000 ns MAX. • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) x 8 bit organization CM O S 16K (2K x 8) Static RAM DESCRIPTION The LH5116S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

LH5116NA-10F

Abstract: 13B1 LH5116NA
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10F 16K SRAM Model Number: LH5116NC Spec. Issue Date: Oct. 22, 2004 Spec No: EL16X148 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)

lh5116na

Abstract: 13B1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

lh5168

Contextual Info: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full

0450B

Abstract: 5116d
Contextual Info: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).

lh5116na-10

Contextual Info: LH5116 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It features high speed access in read mode using output enable (toe).

Contextual Info: LH5116S FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Low power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • j Fully static operation • Three-state outputs • Single +3 V power supply • Package: 24-pin, 450-mil SOP

Contextual Info: LH5116S CM O S 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It operates at a low supply voltage of 3 V ±10%.

5116 ram

Abstract: LH5116H LH5116HN
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

7326

Abstract: 13B1 LH5116NA SHARP
Contextual Info: LH5116NA sharp 2 LH5116NA sharp 3 LH5116NA sharp 4 LH5116NA sharp 5 LH5116NA sharp 6 LH5116NA sharp 7 LH5116NA sharp 8 LH5116NA sharp 9 LH5116NA sharp 10 LH5116NA 11 LH5116NA 12 LH5116NA sharp 13 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization 24 - PIN SOP TOP VIEW • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 [iW (MAX.) • Fully-static operation • Three-state outputs

LH5116N

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).