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    D4217 Search Results

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    D4217 Price and Stock

    Rochester Electronics LLC AD42-173-0

    I.C. 16-BIT A/D IC
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    DigiKey AD42-173-0 Bulk 32
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    Torex Semiconductor LTD XC6501D4217R-G

    IC REG LINEAR 4.2V 200MA 4USPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XC6501D4217R-G Reel 5,000
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    Avnet Americas XC6501D4217R-G Reel 12 Weeks 5,000
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    • 10000 $0.25884
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    TURCK Inc RSSD RSSD 421-7M

    Neu |Turck RSSD RSSD 421-7M
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    Newark RSSD RSSD 421-7M Bulk 1
    • 1 $95.8
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    NEC Electronics Group UPD4217400LLA-A70

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    Bristol Electronics UPD4217400LLA-A70 238
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    NEC Electronics Group UPD4217805G5607JD

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    Bristol Electronics UPD4217805G5607JD 221
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    D4217 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D4217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original
    PDF D4217-2 Voltage15

    inmos transputer reference manual

    Abstract: VME 6340 ibm at motherboard 80286 IMSB404 D4217 D5214 IMS B404
    Text: 35 C hapter 4 cCass constructors Donmos- IMS IMS IMS IMS D7217 D6217 D5217 D4217 C ~\— b □ Product Information C + + native and transputer cross-development systems for IBM PC, NEC PC, Sun 3, Sun 4 and VAX hosts KEY FEATURES • Conformance with the C + + 2.0 specification


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    PDF D7217 D6217 D5217 D4217 470ws D4217-WA D4217-WB D4217-WC inmos transputer reference manual VME 6340 ibm at motherboard 80286 IMSB404 D4217 D5214 IMS B404

    D4217400

    Abstract: nec 4217400
    Text: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /D4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­


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    PDF JJPD4216400, /PD4216400 /JPD4217400 28/24-pin MjE30( 6D-15 fiPD4216400, pPD4216400, D4217400 nec 4217400

    D4205

    Abstract: B-429 IMS B404 b008 b429
    Text: 471 Index by product number For the purposes of this index the product number prefix 'IMS’ is not shown. B008 309 CA12 383 B012 361 CA13 385 B014 329 CA14 385 B015 353 B016 333 B017 321 B018 375 B250 381 B300 377 B401 149 B404 173 B408 209 B409 219 B410 161


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    PDF D4205 D4214 D4216 D4217 D5205 D5214 D5216 D5217 D6205 D6214 B-429 IMS B404 b008 b429

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D e s c r ip tio n T h e /¿PD 42S16400L, 42 1 6400L, 42S 17400 L, 4 2 1 740 0 L are 4 ,1 94,304 w o rd s by 4 bits dyna m ic C M O S R A M s. T he


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    PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L 42S16400L, 6400L, 26-pin VP15-207-2 IR35-207-2

    d4217400

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The


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    PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L PD42S16400L, 4216400L, 42S17400L, 4217400L 42S17400L d4217400

    D4205

    Abstract: IMS B404 B0141 IMS B300 IMS B426
    Text: Chapter 7 63 Transputer Development Kits □ mos 7.1 Product Information Transputer Development Kits The success of any microprocessor is determined as much by the quality of the available development tools as by any other feature. Silicon performance is intimately linked to compiler technology. The use


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    PDF B404-3 B428-12 B426-5 B427-5 B008-1 B015-1 D4205 IMS B404 B0141 IMS B300 IMS B426

    6623A

    Abstract: No abstract text available
    Text: 4k / X V * fjPD421x180/L, 42S1x180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM [M IL V NEC Electronics Inc. Description Fo r th e 4 2 1 7/4 2 S 1 7, RAS o n ly refresh cy cles a n d n o rm al re a d or w r ite cy cles on th e 2 0 4 8 a d d re s s c o m b in a tio n s


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    PDF uPD421x180/L uPD42S1x180/L 18-Bit pPD421x180/L, 42S1X180/L juPD421x180/L jjPD421x 180/L, 42S1x 6623A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET CM O S INTEGRATED CIRCUIT JE C / MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM: ¿D4217405 are assembled.


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    PDF MC-428000F32 32-BIT MC-428000F32 iPD4217405 427S2S 00blb27 M72B-60AES

    NEC 4217400-60

    Abstract: d4217400g3 nec 4216400 nec 4217400 D4217400G3-50-7JD D4217400G3-60-7JD
    Text: DATA SHEET NEC / M O S INTEGRATED CIRCUIT _ /^P P 42 S 16400,4216400,42S17400,4217400 16 M -BIT D Y N A M IC R A M 4 M -W O R D B Y 4-BIT, FA ST P A G E M O D E Description The fiPD42S164Q0, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The


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    PDF 42S17400 uPD42S164Q0 uPD4216400 uPD42S17400 uPD4217400 pPD42S16400, 26-pin VP15-207-2 NEC 4217400-60 d4217400g3 nec 4216400 nec 4217400 D4217400G3-50-7JD D4217400G3-60-7JD

    SIT8103AC-13-33E-24.00000T

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT _ I1PD42S1780QL, 42178QQL 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jUPD42S17800L, 4217800L are 2,097,152 w ords by 8 bits CMOS dynamic RAMs. The fast page mode


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    PDF uPD42S1780QL 42178QQL jUPD42S17800L, 4217800L PD42S17800L 28-pin jiPD42S17800L-A60 4217800L-A60 /JPD42S17800L-A70, SIT8103AC-13-33E-24.00000T

    5M21

    Abstract: No abstract text available
    Text: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features


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    PDF iPD421x180/L, 42S1X180/L 18-Bit 42S16180 42S17180 42S18180 4217/42S17, pPD421x180/L, 5M21

    Untitled

    Abstract: No abstract text available
    Text: SEC • •■ '*i pPD421x800/L, 42S1X800/L X = 6, 7 2,097,152 X 8-Bit Dynamic CMOS RAM NEC Electronics Inc. P relim inary Information S eptem ber 1992 Description The devices listed below are fast-page dynam ic RAMs organized as 2M words by 8 bits and designed to


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    PDF pPD421x800/L, 42S1X800/L 42S16800 42S17800