UPD4216400 Search Results

Contextual Info: UPD4216400LE-60 IL08 * C-MOS 16M 4M WORDx4 -BIT DYNAMIC RAM -TOP VIEW- 1 V DD (+5V) I/O 1 2 GND 28 27 I/O 4 I/O 2 3 26 I/O 3 WE 4 25 CAS RAS 5 24 OE A11 6 23 A9 10 11 12 13 16 17 18 19 20 23 9 6 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 I/O I/O I/O I/O

304X4

Abstract: 44C4000 KM44C4100-7 KM44C4000-6 UPD4217400-70 UPD4216400-80 K1174 Hitachi Scans-001
Contextual Info: - 1 6 M CMOS A 4 m & tt £ CC TRAC max ns) [ Dynami c -y * TRCY TÇAD TAH (ns) (ns) (ns) R A M ( 4, > •? ít ft TP mir. (ns) TWCY min (ns) TDH nin (ns) TRWC min (ns) 194, % V D D or V C C (V) 3 0 4 x 4) I DD max (raA) 2 8 P I N X m I DD STANDBY SB/1 SB2)

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.

D4217400

Abstract: nec 4217400
Contextual Info: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.

NEC uPD 688

Abstract: UPD4217400LG3-A60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The

nec 4217400

Abstract: 4217400 upd4217400
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿ PD4216400, 4217400 are 4 194 304 w o rd s by 4 b its d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP (II and 26-pin plastic SOJ.

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

nec 28 pin

Abstract: 4217400-60 DGS22
Contextual Info: MOS INTEGRATED CIRCUIT f/¿PD42S16400 ,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿iPD42S 16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16400, 42S17400 can execute CAS before RAS se lf refresh and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT juPD 42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 w ords by 4 bits CMOS dynam ic RAMs. The

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S16400L, 42164001 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The ,uPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The

nec vw rcd 300

Contextual Info: NEC MOS INTEGRATED CIRCUIT //PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The |iPD 4216400, 4217400 are 4 194 304 words by 4 bits dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 4 194 304 w o rd s by 4 bits organization

UPD4217400LA60

Abstract: UPD4216400G3-80 UPD4217400LA-60 UPD4217400LA UPD4217400
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT /¿PD42S16400,4216400,4 2 S 17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low pow er consum ption.

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT ;UPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S16400L, 4 2 1 6400L, 42S17400L, 4 2 1 7400L are 4,194,304 words by 4 bits CMOS dynam ic RAMs. The