DF451 Search Results

M771

Abstract: DF451 sine wave ups designing
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS

AN4506

Abstract: AN4839 AN4853 DF451 M771
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications

DF451

Contextual Info: DF451 DF451 Fast Recovery Diode  FEATURES • Double Side Cooling ■ High Surge Capability

DF451

Abstract: M771
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS

Contextual Info: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS

Contextual Info: GEC P L ES S E Y SEMICONDUCTORS W DS4143-3.4 DF451 FAST RECOVERY DIODE APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification. ■ UPS. KEY PARAMETERS v RUM 1600V 295A Jf<AV 3500A

DF451

Abstract: M771
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications

M779b

Abstract: M771 bsr55 DYNEx
Contextual Info: Part and Ordering Number VRRM IRRM @TV ^R M S ) @ Tc = 65C 65’C UsM l2t @Tv) @Tvj vTO @Tvj rT @Tv, p th J-c) p th(c-hs) Tv, (V) (mA) (A) (A) (kA) (A2sx103) (V) (mü) (°C/W) (°C/W) CC) ESM4120* DF451 * 600-1000 600-1600 100 100 334 295 565 543 4.5 3.5

Contextual Info: FEBRUARY 1996 DF451 DS4143-3.4 DF451 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

Contextual Info: DF451 M ITEL Fast Recovery Diode S E M IC O N D U C T O R Supersedes February 1996 version, DS4143 - 3.4 DS4143 - 3.5 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 295A F AV 1FSM 3500A 25|lC Qr 1.22|iS t rr • Induction Heating. ■ A.C. M otor Drives.

ultrasonic generator 40khz

Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Contextual Info: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications

TA32910Q

Contextual Info: M ITEL TA329.Q Asymmetric Thyristor S E M IC O N D U C T O R DS4680 - 2.1 Supersedes January 1997 version, DS4680 - 2.0 KEY PARAMETERS 1400V DRM 370A ^T RMS 2000A ^TSM dVdt 1000V/|iS d l/d t 1000A/|iS t. 7.0(iS APPLICATIONS • High Frequency Applications.

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

TA449

Abstract: DF451
Contextual Info: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4681-5.0 DS4681-5.1 July 2002 APPLICATIONS KEY PARAMETERS • UPS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs ■ Induction Heating

Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2345674281 9ABC12C81 DEC221 F19AAA1 24A4281 9ABC12C81 DEC221 D1AA1E 1 24!A"41 9ABC1C21 DEC21 #A$1%&A1 1 1 1 1

Contextual Info: GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S W DS4681-4.1 TA449.W ASYMMETRIC THYRISTOR APPLICATIONS • ■ KEY PARAMETERS V Drm UPS. Induction Heating. ■ A.C. Motor Drives. ■ 1400V ^ rms >TSM dVdt dl/dt Switch Mode Power Supplies.

Contextual Info: Si GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S DS4680-4.1 TA329.Q ASYMMETRIC THYRISTOR APPLICATIONS KEY PARAMETERS 1400V DRM 370A -T RMS 2000A ^SM dVdt 1 0 0 0 V / ( is 1000A /H S dl/dt • High Frequency Applications. ■ High Power Choppers And Inverters.

TA32912Q

Abstract: TA329-12Q TA32914Q TA32910Q TA329-14Q
Contextual Info: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A

GATE ASSISTED TURN-OFF THYRISTORS

Abstract: ultrasonic generator 40khz AN4839 DF451 TA329
Contextual Info: TA329.Q . TA329.Q Asymmetric Thyristor Advance Information Replaces January 2000 version, DS4680-3.0 DS4680-3.1 July 2002 APPLICATIONS KEY PARAMETERS • High Frequency Applications VDRM 1400V ■ High Power Choppers And Inverters IT RMS 370A ITSM 2000A

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

ta44912w

Contextual Info: TA449.W M ITEL Asymmetric Thyristor S E M IC O N D U C T O R Supersedes January 1997 version, DS4681 - 4.0 DS4681 - 4.1 APPLICATIONS March 1998 KEY PARAMETERS 1400V DRM 400A ^T RMS 4000A ^TSM dVdt 1000V/(is d l/d t 1OOOA/jis t. 10.0|is • UPS. ■ Induction Heating.

65c812

Abstract: asymmetric thyristor DF451 TA449 RC snubber dc motor RC snubber thyristor design AN484 MU86
Contextual Info: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs APPLICATIONS • UPS ■ Induction Heating