DSF110 Search Results

Contextual Info: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

DS4217-2

Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

DSF11060SG

Contextual Info: DSF11060SG DSF11060SG Fast Recovery DioGH DS4548 -  JXO\ 20 /1 31791 KEY PARAMETERS

DS4217-2

Contextual Info: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC

DSF11060SG

Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

1000A 100V power diode

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

Contextual Info: @ M ITEL DSF11060SG Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^ rrm S nubber Diode For GTO C ircuits. IF AV IFSM 6000V 400A 4200A Qr trr 700(iC

1000A 100V power diode

Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

DSF11036

Abstract: 2A Fast Recovery Diodes DSF1114 DSF912 22-button MF12 DSF4012 DSF5006 MF35 MF70
Contextual Info: •im n iiw r»i 1 mnni i rmiTifrff *1 MARCONI CKT TECHNOLOGY 3DE D ■ 5703442 0001714 2 ■ » T d>3-23 FA ST RECOVERY D IO D ES tvpa No. and Deslj nation Repetitiva Peak Revaraa Voltages Available Non* Repetitive Peak Reveráa Voltage VRRM V VRSM V 600-1200

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

Contextual Info: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.

M779b

Abstract: M771 bsr55 DYNEx
Contextual Info: Part and Ordering Number VRRM IRRM @TV ^R M S ) @ Tc = 65C 65’C UsM l2t @Tv) @Tvj vTO @Tvj rT @Tv, p th J-c) p th(c-hs) Tv, (V) (mA) (A) (A) (kA) (A2sx103) (V) (mü) (°C/W) (°C/W) CC) ESM4120* DF451 * 600-1000 600-1600 100 100 334 295 565 543 4.5 3.5

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half