DMN3110S Search Results
DMN3110S Price and Stock
Diodes Incorporated DMN3110S-7MOSFET N-CH 30V 2.5A SOT-23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN3110S-7 | Cut Tape | 7,724 | 1 |
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DMN3110S-7 | Reel | 12 Weeks | 3,000 |
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DMN3110S-7 | 101,754 |
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DMN3110S-7 | Cut Tape | 1,295 | 5 |
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DMN3110S-7 | Bulk | 25 |
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DMN3110S-7 | 1 |
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DMN3110S-7 | 20 Weeks | 3,000 |
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DMN3110S-7 | 10 Weeks | 3,000 |
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DMN3110S-7 | 9,000 | 3,000 |
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DMN3110S-7 | 12,000 | 1 |
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Diodes Incorporated DMN3110SQ-7MOSFET BVDSS: 25V~30V SOT23 T&R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN3110SQ-7 | Cut Tape | 2,440 | 1 |
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DMN3110SQ-7 | Reel | 20 Weeks | 3,000 |
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DMN3110SQ-7 | 2,486 |
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DMN3110SQ-7 | 22 Weeks | 3,000 |
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DMN3110SQ-7 | 1 |
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Zetex / Diodes Inc DMN3110S-7Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN3110S-7 | 819,000 | 3,000 |
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DMN3110S Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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DMN3110S |
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N-CHANNEL ENHANCEMENT MODE MOSFET | Original | |||
DMN3110S-7 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.5A SOT-23 | Original | |||
DMN3110S-7 | TY Semiconductor | MOSFET N-CH 30V 2.7-3.3A - SOT-23 | Original | |||
DMN3110SQ-7 |
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MOSFET BVDSS: 25V~30V SOT23 T&R | Original |
DMN3110S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A V(BR)DSS NEW PRODUCT Features and Benefits • 30V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMN3110S AEC-Q101 DS31561 | |
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance |
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DMN3110S DMN3112S AEC-Q101 J-STD-020 DS31445 | |
Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance |
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DMN3110S AEC-Q101 DS31561 | |
Contextual Info: Product specification DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications |
Original |
DMN3110S AEC-Q101 | |
Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications |
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DMN3110S DS31561 | |
FSV064
Abstract: DSR8A600 DMN3025LSS
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230B-T 1N5252B-T ZMM5264B-7 1N4728A-T 1N4748A-T 1N5231B-T 1N5253B-T ZMM5265B-7 1N4729A-T 1N4749A-T FSV064 DSR8A600 DMN3025LSS | |
DMN62D4SDW-7
Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
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Original |
Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |