DS31561 Search Results
DS31561 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A V(BR)DSS NEW PRODUCT Features and Benefits • 30V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMN3110S AEC-Q101 DS31561 | |
Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance |
Original |
DMN3110S AEC-Q101 DS31561 | |
Contextual Info: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications |
Original |
DMN3110S DS31561 |