DS1230Y Search Results

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

1230Y

Abstract: DALLAS SEMICONDUCTOR Ds1230
Contextual Info: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6

Contextual Info: DS 1230YL/BL DALLAS SEMICONDUCTOR DS1230YL/BL 256K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23

DS1230Y

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-97 9713 H DALLAS DA093172 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19480 48 Hr

DS1230Y-200 DALLAS

Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: RELIABILITY MONITOR DS1230YL-100 JAN '99 LPM MONITOR - DALLAS DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230Y A1 LPM 720 Dallas 9844 JOB_NO DESCRIPTION 105760 CONDITION 23058 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 23059 STORAGE LIFE

Contextual Info: RELIABILITY MONITOR DS1230Y-100 JAN '01 MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 A1-Y 0045 720 305435 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 26427 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 26428 PHYSICAL DIMENSIONS MIL-STD-883-2016

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-96 9611 H DALLAS DA076935AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-17208 48 Hr

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

DS1230Y-100

Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC ADS1230
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC DS1230Y-150 DALLAS
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

9735 h

Abstract: DS1230Y
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Oct-97 9735 H DALLAS DA097816 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20679 48 Hr

DS1230Y-120-IND

Abstract: DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

2-5779

Contextual Info: RELIABILITY MONITOR DS1230YL-100 JAN '00 LPM MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 9944 720 JOB_NO DESCRIPTION 110596 34 CONDITION 25010 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 25011 STORAGE LIFE 25012 TEMP CYCLE

25814

Contextual Info: RELIABILITY MONITOR DS1230Y-200 APR '00 Monitor DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 0005 720 118511 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 25412 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 25413 PHYSICAL DIMENSIONS MIL-STD-883-2016

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the

Contextual Info: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4

Contextual Info: DS1230Y IL08 C-MOS 256 K 32,768 x 8 -BIT NONVOLATILE STATIC RAM —TOP/SIDE VIEW— 24 23 22 21 20 19 18 17 16 15 14 13 1 26 2 23 21 24 25 1 2 3 4 5 6 7 8 9 10 11 12 3 4 5 6 7 8 9 10 A14 DQ7 A13 DQ6 A12 DQ5 A11 DQ4 A10 DQ3 A9 DQ2 A8 DQ1 A7 DQ0 SIGNAL PIN

DS1230

Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Oct-96 9635 M DALLAS DA084252 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-18332 48 Hr