DS34P Search Results

32-PIN

Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Contextual Info: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM

DS1245V

Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Contextual Info: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola­

monitor btc

Abstract: McKenzie 34-PIN DS1330 DS1330AB DS1330Y DS1330Y-70
Contextual Info: DS1330Y/AB P R E L IM IN A R Y I a D S 1 3 3 0 Y /A B m U A L L A 9 256K Nonvolatile SRAM w jth ¿attery Monitor s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC NC A14 A13 A12 A11

Contextual Info: DS1350Y/AB PRELIMINARY DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 512K x 8 volatile static RAM or EEPROM

Contextual Info: DS1650Y/AB DALLAS SEMICONDUCTOR DS1650Y/AB Partitionable 4096K NV SRAM PIN ASSIGNMENT FEATURES •10 years minimum data retention in the absence of external power A 18 I| 1 32 1 A 16 I1 2 31 % A 14 11 3 3 0 1 A 17 A 12 I1 4 291 W E A 7 I1 5 2 8 1 A 13 A 6

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs

Contextual Info: DS1 7 5 0 Y / Y L P M PRELIMINARY DALLAS SEMICONDUCTOR DS1750Y/YLPM 3 Volt Partitionable 4 0 9 6 K NV S R A M PIN A S S IG N M E N T FEA TU R E S • D a t a r e t e n t i o n in t h e a b s e n c e o f W q q • D a t a is a u t o m a t i c a l l y p r o t e c t e d d u r i n g p o w e r l o s s

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power

102KZ

Abstract: PE65387
Contextual Info: S e m ic o n d u c to r C o rp o ra tio n CS6158A Rev H Process Change Notification Date: August 31, 1993 Rev H of the CS6158A is a three-layer, yield-enhancement revision of the mask set that made no changes to form , fit or function. Repeated below are long-standing corrections to the CS6158A data sheet. There were no design changes

Contextual Info: DS1750Y/YLPM P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1750Y/YLPM 3 Volt Partitionable 4096K NV SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc I1 1 I1 2 A14 I1 3 A12 I1 4 A7 I1 5 A6 I1 6 A5 I1 7 A4 1 18 A3 1 19 A2 1 1 10 A1 I1 11 A0 I1 12

Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM

DS1345

Abstract: DS1345AB DS1345Y DS1334
Contextual Info: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC

DS1330

Abstract: DS1330AB DS1330Y
Contextual Info: DS1330Y/AB PRELIMINARY DS1330Y/AB 256K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

Contextual Info: DS1645Y/AB, DS1645YLPM/ABLPM DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC k • Data is automatically protected during power loss A16 • Directly replaces 128K x 8 volatile static RAM or EEPROM

Contextual Info: DS1330Y/AB PRELIMINARY DS1330Y/AB 256K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during Vcc power loss • Power supply monitor resets processor when Vcc

Contextual Info: CS6158A Semiconductor Corporation PCM Line Interface Features General Description • Provides Analog PCM Line Interface for T1 and PCM-30 Applications The CS6158 and CS6158A combine the analog trans­ mit and receive line interface functions for a T1/PCM-30

Contextual Info: DSI 330Y/AB PRELIMINARY DS1330Y/AB DALLAS SEMICONDUCTOR FEATURES 256K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 32K x 8 volatile static RAM or EEPROM

Contextual Info: DS1750Y/YLPM P R E L IM IN A R Y DALLAS DS1750Y/YLPM 3 Volt Partitionable 4096K NV SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 512K x 8 volatile static RAM or EEPROM

1730Y

Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V qq A 14 11 1 28 1 V CC A12 1 1 27 § WE • Directly replaces 32K x 8 volatile static RAMs or EEPROM s A7 1 1 A6

DS1645Y-70

Contextual Info: DS1645Y/AB DALLAS s e m ic o n d u c t o r DS1645Y/AB Partitionable 1024K NV SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power I| 1 11 2 A14 I1 3 A12 I1 4 A7 I1 5 A6 I1 6 A5 1 7 A4 | B • Data is automatically protected during power loss

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM

34-pin

Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns